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Merck
모든 사진(2)

주요 문서

326127

Sigma-Aldrich

Indium(III) nitrate hydrate

99.99% trace metals basis

동의어(들):

Indium trinitrate hydrate, Indium(3+) trinitrate hydrate

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About This Item

Linear Formula:
In(NO3)3 · xH2O
CAS Number:
Molecular Weight:
300.83 (anhydrous basis)
EC Number:
MDL number:
UNSPSC 코드:
12352302
PubChem Substance ID:
NACRES:
NA.23

Quality Level

분석

99.99% trace metals basis

양식

powder and chunks

반응 적합성

reagent type: catalyst
core: indium

불순물

≤150.0 ppm Trace Metal Analysis

SMILES string

[In+3].[H]O[H].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O

InChI

1S/In.3NO3.H2O/c;3*2-1(3)4;/h;;;;1H2/q+3;3*-1;

InChI key

YZZFBYAKINKKFM-UHFFFAOYSA-N

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일반 설명

Indium(III) nitrate hydrate is an indium based precursor solution, which can be annealed at 500°C and spin coated to form indium oxide thin films.

애플리케이션

Indium(III) nitrate hydrate is used in the preparation of indium based substrates for the fabrication of semiconductor devices, such as thin film transistors.

픽토그램

Flame over circleExclamation mark

신호어

Danger

유해 및 위험 성명서

Hazard Classifications

Acute Tox. 4 Dermal - Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Ox. Sol. 2

Storage Class Code

5.1B - Oxidizing hazardous materials

WGK

WGK 3

Flash Point (°F)

Not applicable

Flash Point (°C)

Not applicable

개인 보호 장비

Eyeshields, Gloves, type P3 (EN 143) respirator cartridges


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문서 라이브러리 방문

Effect of the synthesis route on the structural properties and shape of the indium oxide (In2O3) nano-particles
Bagheri-Mohagheghi M-M, et al.
Physica E: Low-Dimensional Systems and Nanostructures, 41(10), 1757-1762 (2009)
High electrical performance of wet-processed indium zinc oxide thin-film transistors
Park K, et al.
IEEE Electron Device Letters, 31(4), 311-313 (2010)
Influence of precursor concentration on the structural, optical and electrical properties of indium oxide thin film prepared by a sol-gel method
Lau LN, et al.
Applied Surface Science, 345, 355-359 (2015)
William J Scheideler et al.
ACS applied materials & interfaces, 10(43), 37277-37286 (2018-10-10)
Inorganic transparent metal oxides represent one of the highest performing material systems for thin-film flexible electronics. Integrating these materials with low-temperature processing and printing technologies could fuel the next generation of ubiquitous transparent devices. In this work, we investigate the

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