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Safety Information

30101

Sigma-Aldrich

Ammonium fluoride

puriss. p.a., ACS reagent, ≥98%

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About This Item

Linear Formula:
NH4F
CAS Number:
12125-01-8
Molecular Weight:
37.04
EC Number:
235-185-9
MDL number:
MFCD00011423
UNSPSC Code:
12352302
eCl@ss:
38050106
PubChem Substance ID:
329753432

grade

ACS reagent
puriss. p.a.

Assay

≥98%

form

solid

impurities

≤0.1% hexafluorosilicate (as SiF6)
≤1% ammonium hydrogen difluoride (NH4HF2)

ign. residue

≤0.005% (as SO4)

anion traces

chloride (Cl-): ≤5 mg/kg
sulfate (SO42-): ≤50 mg/kg

cation traces

Cd: ≤5 mg/kg
Cu: ≤5 mg/kg
Fe: ≤5 mg/kg
K: ≤20 mg/kg
Na: ≤20 mg/kg
Pb: ≤5 mg/kg
Zn: ≤5 mg/kg

SMILES string

N.F

InChI

1S/FH.H3N/h1H;1H3

InChI key

LDDQLRUQCUTJBB-UHFFFAOYSA-N

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Pictograms

Skull and crossbones
GHS06

Signal Word

Danger

Hazard Statements

H301 + H311 + H331

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 1

Flash Point(F)

does not flash

Flash Point(C)

does not flash

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

PDSCL

Deleterious substance

PRTR

Class I Designated Chemical Substances

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

30101-BULK:
30101-6X1KG:
30101-50KG-H:
30101-6X100G:
30101-1KG:
30101-VAR:
30101-100G:

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Etching processing of Si (111) and Si (100) surfaces in an ammonium fluoride solution investigated by in situ ATR-IR.
Nakamura M, et al.
Electrochimica Acta, 41(5), 681-686 (1996)
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
Yuexiang Li et al.
Journal of hazardous materials, 182(1-3), 90-96 (2010-06-29)
A nitrogen-doped TiO(2) (N-TiO(2)) photocatalyst was prepared by calcination of the hydrolysis precipitate of Ti(SO(4))(2) with aqueous ammonia. The prepared N-TiO(2) was treated with NH(4)F (F-N-TiO(2)) by an impregnation-calcination method. The photocatalyst (F-N-TiO(2)) was characterized by X-ray diffraction (XRD), Fourier
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