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GRFETS10

Sigma-Aldrich

Graphene FET chip

S10

Synonym(s):

Graphene FET, Graphene FET sensor, Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry

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About This Item

UNSPSC Code:
43211915
NACRES:
NA.23

description

Dirac point:< 50 V
Gate Oxide material: SiO2
Gate Oxide thickness: 90 nm
Graphene field-effect mobility: >1000 cm2/V·s
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2
Metallization: Chromium 2 nm/Gold 50 nm
Monolayer CVD grown Graphene based field effect transistors (FET) S10
Residual charge carrier density: <2 x 1012 cm-2
Resistivity of substrate: 1-10 Ω·cm
Yield >75%

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General description

Device configuration:

This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.
Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

Application

  • Graphene device research
  • FET based sensor research for active materials deposited on graphene
  • Chemical sensors
  • Biosensors
  • Bioelectronics
  • Magnetic sensors
  • Photodetectors
GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Features and Benefits

Device Features:

  • State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
  • Devices are not encapsulated and can be functionalized by additives
  • Perfect platform for sensor research and development
  • 36 individual graphene FETs per chip
  • Mobilities typically > 1000 cm2/V·s

Caution

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:
  • Be careful when handling the graphene FET chip.
  • Tweezers should not contact the device area directly.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

ISHL Indicated Name

Substances Subject to be Indicated Names

ISHL Notified Names

Substances Subject to be Notified Names

JAN Code

GRFETS10-1EA:

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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