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756393

Sigma-Aldrich

Aluminum nitride

powder, -200 mesh, 99.8% trace metals basis

Synonym(s):

Aluminum mononitride

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About This Item

Linear Formula:
AlN
CAS Number:
24304-00-5
Molecular Weight:
40.99
EC Number:
246-140-8
MDL number:
MFCD00003429
UNSPSC Code:
12352300
PubChem Substance ID:
329766539
NACRES:
NA.23

Assay

99.8% trace metals basis

form

powder

particle size

-200 mesh

mp

>2200 °C (lit.)

density

3.26 g/mL at 25 °C (lit.)

SMILES string

N#[Al]

InChI

1S/Al.N

InChI key

PIGFYZPCRLYGLF-UHFFFAOYSA-N

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Application

Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices.

Pictograms

Health hazardEnvironment
GHS08,GHS09

Signal Word

Danger

Hazard Statements

H372,H410

Hazard Classifications

Aquatic Acute 1 - Aquatic Chronic 1 - STOT RE 1 Inhalation

Target Organs

Lungs

Storage Class Code

6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

JAN Code

756393-5G:
756393-VAR:
756393-BULK:

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Certificates of Analysis (COA)

Lot/Batch Number
MKCT7109
MKBK0051V
MKBK0051

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Boron nitride powder, ~1 μm, 98%

Sigma-Aldrich

255475

Boron nitride

Ambacher, O.
Journal of Physics D: Applied Physics, 31, 2653-2653 (1998)
Strite, S.; Morkoc, H.
J. Vac. Sci. Technol. B, 10, 1237-1237 (1992)
Fang, X.; et al.
Journal of Materials Chemistry, 18, 509-509 (2008)
Wolfram H P Pernice et al.
Optics express, 20(11), 12261-12269 (2012-06-21)
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), we obtain
Chengjie Zuo et al.
IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 82-87 (2009-12-31)
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor
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