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vapor density
3.5 (vs air)
vapor pressure
1254 mmHg ( 20 °C)
description
film resistivity > 50 Ω-cm
Assay
≥99.99% trace metals basis
autoignition temp.
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES string
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI key
MROCJMGDEKINLD-UHFFFAOYSA-N
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General description
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
Application
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
Supplementary Hazards
Storage Class Code
2A - Gases
WGK
WGK 1
Flash Point(F)
-34.6 °F
Flash Point(C)
-37 °C
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Journal of biomolecular structure & dynamics, 22(3), 331-337 (2004-10-12)
This report shows a new DNA stretching method using migration of an ice-water interface. DNA molecules were stretched accompanying the migration of the solid-liquid interface and immobilized in frozen area. This simple method needs no chemical modification to keep DNA
Electrophoresis, 20(12), 2412-2419 (1999-09-28)
The feasibility of polymeric phases based on a silicone polymer backbone as pseudostationary phases for electrokinetic chromatography has been investigated. Silicone phases were studied because of the range of chemistries that could be developed based on these backbones, and because
Archives of toxicology, 70(3-4), 218-223 (1996-01-01)
Using male ICR mice, the LC50 and acute and subacute inhalation toxicity of dichlorosilane (SiH2Cl2, DCS) and the fate of DCS released into the air were investigated. DCS resolved and minute particles including silicon and chloride were observed, when DCS
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
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