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901621

Sigma-Aldrich

Buffered oxide etchant (BOE) 10:1

Synonym(s):

BHF, Buffered HF

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About This Item

UNSPSC Code:
12161700
NACRES:
NA.23

form

liquid

Related Categories

General description

Buffered oxide etchant (BOE) is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO2) or silicon nitride (Si3N4). It is a mixture of a buffering agent, such as ammonium fluoride (NH4F), and hydrofluoric acid (HF). Concentrated HF etches silicon dioxide too quickly for good process control and also peels photoresist used in lithographic patterning.

Application

Buffered oxide etchant (BOE) 10:1 can be used in the etching of titanium carbide, which can be used in microelectromechanical systems (MEMS). It can also be used in the etching of spin-on-dopant (SOD) for the development of conductor-insulator-conductor tunneling diodes. It can also be used to enhance the surface of fused quartz devices.

Pictograms

Skull and crossbonesCorrosion
GHS06,GHS05

Signal Word

Danger

Hazard Statements

H301 + H331,H310,H314

Hazard Classifications

Acute Tox. 2 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Skin Corr. 1B

Storage Class Code

6.1B - Non-combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Regulatory Listings

Regulatory Listings are mainly provided for chemical products. Only limited information can be provided here for non-chemical products. No entry means none of the components are listed. It is the user’s obligation to ensure the safe and legal use of the product.

EU REACH Annex XVII (Restriction List)

CAS No.

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Certificates of Analysis (COA)

Lot/Batch Number
MKCV9352
MKCW6926
MKCT6710
MKCS8940
MKCQ4119

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Study on surface roughness improvement of Fused Quartz after thermal and chemical post-processing
2016 IEEE International Symposium on Inertial Sensors and Systems, 31(8), 101-104 (2016)
Integration of wear-resistant titanium carbide coatings into MEMS fabrication processes
Radhakrishnan G, et al.
Tribology Letters, 8(2-3), 133-137 (2000)
New process development for planar-type CIC tunneling diodes
Choi K, et al.
IEEE Electron Device Letters, 31(8), 809-811 (2010)

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