366870
Indium(III) phosphide
pieces, 3-20 mesh, 99.998% trace metals basis
Synonym(s):
Indium monophosphide, Indium phosphide
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About This Item
Linear Formula:
InP
CAS Number:
Molecular Weight:
145.79
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
99.998% trace metals basis
form
pieces
reaction suitability
reagent type: catalyst
core: indium
particle size
3-20 mesh
SMILES string
P#[In]
InChI
1S/In.P
InChI key
GPXJNWSHGFTCBW-UHFFFAOYSA-N
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Carc. 1B - Repr. 2 - STOT RE 1
Storage Class Code
6.1C - Combustible acute toxic Cat.3 / toxic compounds or compounds which causing chronic effects
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
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Myung-Joon Kwack et al.
Optics express, 20(27), 28734-28741 (2012-12-25)
A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters
Jens Hofrichter et al.
Optics express, 20(9), 9363-9370 (2012-04-27)
We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 × 10(-9)
Vasilis Katopodis et al.
Optics express, 20(27), 28538-28543 (2012-12-25)
We demonstrate the first integrated transmitter for serial 100 Gb/s NRZ-OOK modulation in datacom and telecom applications. The transmitter relies on the use of an electro-optic polymer modulator and the hybrid integration of an InP laser diode and InP-DHBT electronics
Ilaria Bargigia et al.
Applied spectroscopy, 66(8), 944-950 (2012-07-18)
We present a new compact system for time-domain diffuse optical spectroscopy of highly scattering media operating in the wavelength range from 1100 nm to 1700 nm. So far, this technique has been exploited mostly up to 1100 nm: we extended
Kouta Tateno et al.
Nano letters, 12(6), 2888-2893 (2012-05-19)
We investigated the Au-assisted growth of alternating InAsP/InP heterostructures in wurtzite InP nanowires on InP(111)B substrates for constructing multiple-quantum-dot structures. Vertical InP nanowires without stacking faults were obtained at a high PH(3)/TMIn mole flow ratio of 300-1000. We found that
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