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764639

Sigma-Aldrich

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2 ′′:5′′,2′′′-quaterthiophene

Sinónimos:

α,ω-Diperfluorohexyl-quarterthiophene, DFH-4T

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About This Item

Fórmula empírica (notación de Hill):
C28H8F26S4
Número de CAS:
446043-85-2
Peso molecular:
966.58
MDL number:
MFCD23098728
UNSPSC Code:
12352103
PubChem Substance ID:
329767133
NACRES:
NA.23

form

solid

Quality Level

100

mp

205-210 °C

semiconductor properties

N-type (mobility≤0.64 cm2/V·s)

SMILES string

FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)c1ccc(s1)-c2ccc(s2)-c3ccc(s3)-c4ccc(s4)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

InChI

1S/C28H8F26S4/c29-17(30,19(33,34)21(37,38)23(41,42)25(45,46)27(49,50)51)15-7-5-13(57-15)11-3-1-9(55-11)10-2-4-12(56-10)14-6-8-16(58-14)18(31,32)20(35,36)22(39,40)24(43,44)26(47,48)28(52,53)54/h1-8H

InChI key

UBMTYFFPSPVBSP-UHFFFAOYSA-N

General description

5,5′′′-Bis(tridecafluorohexyl)-2,2′:5′,2′′:5′′,2′′′-quaterthiophene (DFH-4T) is a n-type semiconducting material. It is a quaterthiophene derivative that contains fluoroalkyl groups and can be used as an electron transporting layer. It can be used in organic electronics.

Application

This molecule has shown high mobilities (electron mobilities of up to 0.64 cm2/Vs) when used as an n-type semiconducting material in OFET devices.

Storage Class

11 - Combustible Solids

wgk_germany

WGK 3

flash_point_f

Not applicable

flash_point_c

Not applicable

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Certificados de análisis (COA)

Lot/Batch Number
MKBL5287

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Overlapping-Gate Organic Light-Emitting Transistors
Lee J, et al.
Advanced Electronic Materials, 5(1), 1800437-1800437 (2019)
A new method of using supercritical carbon dioxide as a green solvent for synthesis and purification of 5, 5?-bis (tridecafluorohexyl)-2, 2?: 5?, 2 ?: 5 ?, 2?-quaterthiophene, which is one of n-type organic semiconducting materials
Hirase R, et al.
Tetrahedron Letters, 59(5), 469-472 (2018)
Hakan Usta et al.
Accounts of chemical research, 44(7), 501-510 (2011-05-28)
Organic semiconductors have unique properties compared to traditional inorganic materials such as amorphous or crystalline silicon. Some important advantages include their adaptability to low-temperature processing on flexible substrates, low cost, amenability to high-speed fabrication, and tunable electronic properties. These features

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