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104817

Sigma-Aldrich

Trichloro(octadecyl)silane

≥90%

Sinónimos:

Octadecyltrichlorosilane

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About This Item

Fórmula lineal:
CH3(CH2)17SiCl3
Número de CAS:
112-04-9
Peso molecular:
387.93
Beilstein:
1778847
Número CE:
203-930-7
Número MDL:
MFCD00000484
Código UNSPSC:
12352103
ID de la sustancia en PubChem:
24846677
NACRES:
NA.23

densidad de vapor

>1 (vs air)

Nivel de calidad

100

presión de vapor

<5 mmHg ( 20 °C)

Ensayo

≥90%

índice de refracción

n20/D 1.459 (lit.)

bp

223 °C/10 mmHg (lit.)

densidad

0.984 g/mL at 25 °C (lit.)

cadena SMILES

CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl

InChI

1S/C18H37Cl3Si/c1-2-3-4-5-6-7-8-9-10-11-12-13-14-15-16-17-18-22(19,20)21/h2-18H2,1H3

Clave InChI

PYJJCSYBSYXGQQ-UHFFFAOYSA-N

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Descripción general

Self-assembled monolayers (SAMs) are used as passivating layers and for controlled modification of surface properties of substrates. Their main applications include wetting, adhesion, friction, chemical sensing and ultra-fine scale lithography. Alkytrichlorosilanes are commonly used for synthesising SAMs on Silicon dioxide which are commonly used in microelectronics. Trichloro(octadecyl)silane is a widely used alkyltrichlorosilane.
Trichloro(octadecyl)silane (OTS) is an alkoxy silane with a large alkyl and polar head group, mainly used as a self-assembled monolayer (SAM) on a variety of nanoparticles and metal oxides substrates. It provides an amphiphilic character that can be used in molecular and opto-electronics applications.

Aplicación

OTS can be used to silanize poly(vinylalcohol) (PVA)/nanosilica (SiO2) nanofibers that can provide a hydrophobic coating on the wooden surfaces by electrospinning. It can also be used as a SAM on the surface of silica (SiO2) gate dielectric for the development of organic field effect transistor (OFETs). It may also be used in a variety of applications like improving the electrochemical performance for dye sensitized solar cells and for the development of metal insulated field effect transistors.

Pictogramas

Corrosion
GHS05

Palabra de señalización

Danger

Frases de peligro

H314

Clasificaciones de peligro

Eye Dam. 1 - Skin Corr. 1B

Código de clase de almacenamiento

8A - Combustible corrosive hazardous materials

Clase de riesgo para el agua (WGK)

WGK 1

Punto de inflamabilidad (°F)

404.6 °F - closed cup

Punto de inflamabilidad (°C)

207 °C - closed cup

Equipo de protección personal

Faceshields, Gloves, Goggles, type ABEK (EN14387) respirator filter

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Certificados de análisis (COA)

Lot/Batch Number
0000159173
0000159173
0000426858
0000426858
0000421281

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Coating of wood by means of electrospun nanofibers based on PVA/SiO2 and its hydrophobization with octadecyltrichlorosilane (OTS).
Kumar A, et al.
Holzforschung, 71(3), 225-231 (2017)
Shao-Yu Chen et al.
Nano letters, 12(2), 964-969 (2012-01-10)
In this article, we present the transport and magnetotransport of high-quality graphene transistors on conventional SiO(2)/Si substrates by modification with organic molecule octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs). Graphene devices on OTS SAM-functionalized substrates with high carrier mobility, low intrinsic doping
Siyang Yu et al.
Analytical and bioanalytical chemistry, 411(21), 5415-5422 (2019-07-19)
Isoelectric focusing (IEF), a powerful technique for protein separation and enrichment, was successfully integrated into microfluidic paper-based analytical devices (μPADs) in this work. The μPADs for isoelectric focusing were fabricated by octadecyltrichlorosilane (OTS) silanization and subsequent region-selective plasma treatment. The
Wenlong Jin et al.
Nature communications, 9(1), 3586-3586 (2018-09-06)
Organic materials are emerging thermoelectric candidates for flexible power generation and solid-cooling applications. Although the Peltier effect is a fundamental thermoelectric effect that enables site-specific and on-demand cooling applications, the Peltier effect in organic thermoelectric films have not been investigated. Here we
Structural evaluation of 5, 5'-bis (naphth-2-yl)-2, 2'-bithiophene in organic field-effect transistors with n-octadecyltrichlorosilane coated SiO2 gate dielectric.
Ejdrup A, et al.
Langmuir, 34 (23), 6727?6736-6727?6736 (2018)
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