Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect.

Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect.

Journal of the American Chemical Society (2006-10-26)

Yeonwoong Jung, Se-Ho Lee, Dong-Kyun Ko, Ritesh Agarwal

摘要

Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials