化学气相沉积

化学气相沉积（CVD）是一种在受控化学反应的气相中在衬底表面上外延式沉积固体材料膜的方法。CVD也称薄膜沉积，广泛用于电子学、光电子学、催化和能量应用，如半导体、硅晶片制备和可打印太阳能电池。

CVD技术是一种快速、多用途的辅助薄膜生长的方法，可以用来生成具有一致的厚度、可控孔隙率的纯涂层，甚至可用于复杂或弯曲表面。此外，大面积选择性CVD也可以用于图形化衬底。CVD是一种可扩大、可控制且经济有效的生长方法，可用于自下而上合成二维（2D）材料或薄膜，如金属（如硅、钨）、碳（如石墨烯、钻石）、砷化物、碳化物、氮化物、氧化物和过渡金属二硫化物（TMDC）。为了合成高度有序的薄膜，需要采用高纯度金属前体（有机金属、卤化物、烷烃、醇盐和酮酸酯）。

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薄膜层的组成和形貌随CVD过程中选定前体和底物、温度、反应室压力、载气流速和源-衬距离的不同而异。原子层沉积（ALD）是CVD的一个分支，可以通过前体在衬底上进行的自限性连串反应进一步控制薄膜沉积。