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521574

Sigma-Aldrich

Gallium phosphide

99.99% trace metals basis

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About This Item

Linear Formula:
GaP
CAS Number:
Molecular Weight:
100.70
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
NACRES:
NA.23
Pricing and availability is not currently available.

Assay

99.99% trace metals basis

form

chunks

SMILES string

[P]#[Ga]

InChI

1S/Ga.P

InChI key

HZXMRANICFIONG-UHFFFAOYSA-N

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Signal Word

Warning

Hazard Statements

Hazard Classifications

Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Simone Marja Rodrigo et al.
Photomedicine and laser surgery, 27(6), 929-935 (2009-08-28)
To evaluate, using histological analysis, the systemic action and repair process of wounds produced on the back of rats and treated with red, infrared, or both lasers applied directly or indirectly to the wounds. Skin tissue repair and wound healing
David Richards et al.
Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
Gallium phosphide is a semiconductor material that can be used for the fabrication of optoelectronic devices. The report compares the ability of two similar organic molecules to form covalent bonds with the GaP(100) surface. Undecenoic acid (UDA) is a terminal
Ivan Avrutsky et al.
Optics express, 18(19), 20370-20383 (2010-10-14)
Integrated chip-scale optical systems are an attractive platform for the implementation of non-linear optical interactions as they promise compact robust devices that operate reliably with lower power consumption compared to analogs based on bulk nonlinear crystals. The use of guided
Mohammad Montazeri et al.
Nano letters, 10(3), 880-886 (2010-02-06)
Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by
I Cestier et al.
Optics express, 19(7), 6093-6099 (2011-04-01)
We describe dynamical four wave mixing (FWM) functionalities of an GaInP photonic crystal waveguide. A W1 waveguide was used to wavelength convert 100 ps pulses and for sampling a 10.56 Gbit/s data stream so as to time demultiplex it into

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