266809
Hafnium
turnings, crystal bar, 99.7% trace metals basis
Synonym(s):
Celtium, Hafnium element
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About This Item
Empirical Formula (Hill Notation):
Hf
CAS Number:
Molecular Weight:
178.49
MDL number:
UNSPSC Code:
12141718
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
99.7% trace metals basis
form
turnings, crystal bar
resistivity
29.6 μΩ-cm, 0°C
bp
4602 °C (lit.)
mp
2227 °C (lit.)
density
13.3 g/cm3 (lit.)
SMILES string
[Hf]
InChI
1S/Hf
InChI key
VBJZVLUMGGDVMO-UHFFFAOYSA-N
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Storage Class Code
11 - Combustible Solids
WGK
WGK 1
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Yu Gong et al.
Dalton transactions (Cambridge, England : 2003), 41(38), 11706-11715 (2012-08-18)
The isolated group 4 metal oxydifluoride molecules OMF(2) (M = Ti, Zr, Hf) with terminal oxo groups are produced specifically on the spontaneous reactions of metal atoms with OF(2) through annealing in solid argon. The product structures and vibrational spectra
Christopher C Underwood et al.
Inorganic chemistry, 52(1), 237-244 (2012-12-19)
This paper describes the hydrothermal chemistry of alkali hafnium fluorides, including the synthesis and structural characterization of five new alkali hafnium fluorides. Two ternary alkali hafnium fluorides are described: Li(2)HfF(6) in space group P31m with a = 4.9748(7) Å and
Byung-Hak Moon et al.
Journal of nanoscience and nanotechnology, 11(8), 7428-7432 (2011-11-23)
In this study, we investigated the electrochemical oxide nanotube formation on the Ti-35Ta-xHf alloys for dental materials. The Ti-35Ta-xHf alloys contained from 3 wt.% to 15 wt.% Hf were manufactured by arc melting furnace. The nanotube oxide layers were formed
Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect
Suresh Kumar Raman Pillai et al.
ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)
The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with
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