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651486

Sigma-Aldrich

Gallium arsenide

(single crystal substrate), <100>, diam. × thickness 2 in. × 0.5 mm

Sinónimos:

Gallium monoarsenide

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About This Item

Fórmula lineal:
GaAs
Número de CAS:
1303-00-0
Peso molecular:
144.64
Número CE:
215-114-8
Número MDL:
MFCD00011017
Código UNSPSC:
12352300
ID de la sustancia en PubChem:
24883832
NACRES:
NA.23

Formulario

(single crystal substrate)

resistividad

≥1E7 Ω-cm

diám. × grosor

2 in. × 0.5 mm

densidad

5.31 g/mL at 25 °C (lit.)

propiedades de los semiconductores

<100>

cadena SMILES

[Ga]#[As]

InChI

1S/As.Ga

Clave InChI

JBRZTFJDHDCESZ-UHFFFAOYSA-N

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Categorías relacionadas

Propiedades físicas

Mobility >=4500 cm2 · V-1 · S-1
Undoped (Si-type semiconductor), EPD < 5 × 104 cm-2, growth technique = LEC & HB

Forma física

cubic (a = 5.6533 Å)

Pictogramas

Health hazard
GHS08

Palabra de señalización

Danger

Frases de peligro

H350,H360F,H372

Clasificaciones de peligro

Carc. 1B - Repr. 1B - STOT RE 1

Órganos de actuación

Respiratory system,hematopoietic system

Código de clase de almacenamiento

6.1A - Combustible acute toxic Cat. 1 and 2 / very toxic hazardous materials

Clase de riesgo para el agua (WGK)

WGK 3

Punto de inflamabilidad (°F)

Not applicable

Punto de inflamabilidad (°C)

Not applicable

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Certificados de análisis (COA)

Lot/Batch Number
MKCW5704
MKCQ3703
MKCP1414
MKCH7479
MKCC3292

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Chao-Wei Hsu et al.
Nanotechnology, 23(49), 495306-495306 (2012-11-17)
GaAs is grown by metal-organic vapor-phase epitaxy on a 55 nm round-hole patterned Si substrate with SiO(2) as a mask. The threading dislocations, which are stacked on the lowest energy facet plane, move along the SiO(2) walls, reducing the number
Shih-Wei Tan et al.
PloS one, 7(11), e50681-e50681 (2012-12-12)
Characterization and modeling of metal-semiconductor-metal (MSM) GaAs diodes using to evaporate SiO₂ and Pd simultaneously as a mixture electrode (called M-MSM diodes) compared with similar to evaporate Pd as the electrode (called Pd-MSM diodes) were reported. The barrier height (φ(b))
I I Yakimenko et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 072201-072201 (2013-01-19)
We analyze the occurrence of local magnetization and the effects of electron localization in different models of quantum point contacts (QPCs) using spin-relaxed density functional theory (DFT/LSDA) by means of numerical simulations. In the case of soft confinement potentials the
Anand Kumar Tatikonda et al.
Biosensors & bioelectronics, 45, 201-205 (2013-03-19)
Microelectronic-based sensors are ideal for real-time continuous monitoring of health states due to their low cost of production, small size, portability, and ease of integration into electronic systems. However, typically semiconductor-based devices cannot be operated in aqueous solutions, especially in
Kazuue Fujita et al.
Optics express, 20(18), 20647-20658 (2012-10-06)
Device-performances of 3.7 THz indirect-pumping quantum-cascade lasers are demonstrated in an InGaAs/InAlAs material system grown by metal-organic vapor-phase epitaxy. The lasers show a low threshold-current-density of ~420 A/cm2 and a peak output power of ~8 mW at 7 K, no
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