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551112

Sigma-Aldrich

Rubrene

sublimed grade, 99.99% trace metals basis

Sinónimos:

5,6,11,12-Tetraphenylnaphthacene

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About This Item

Fórmula empírica (notación de Hill):
C42H28
Número de CAS:
517-51-1
Peso molecular:
532.67
Beilstein:
1917339
Número CE:
208-242-0
Número MDL:
MFCD00003703
Código UNSPSC:
12352103
ID de la sustancia en PubChem:
24879199
NACRES:
NA.23

grado

sublimed grade

Nivel de calidad

100

Ensayo

99.99% trace metals basis

mp

330-335 °C (lit.)

λmáx.

299 nm
299 nm

fluorescencia

λem 550 nm in THF

Energía orbital

HOMO 5.4 eV 
LUMO 3.2 eV 

rendimiento de la unidad OLED

ITO/CuPc/NPD/Alq3:Rubrene (5%): DCM2 (2%)/Alq3/Mg:In

  • Color: red
  • Max. Luminance: 7780 Cd/m2

ITO/PEDOT:PSS/EHCz:Rubrene (1 wt%)/Cs2CO3:ITO
  • Color: red
  • Max. EQE: 0.03 %

cadena SMILES

c1ccc(cc1)-c2c3ccccc3c(-c4ccccc4)c5c(-c6ccccc6)c7ccccc7c(-c8ccccc8)c25

InChI

1S/C42H28/c1-5-17-29(18-6-1)37-33-25-13-14-26-34(33)39(31-21-9-3-10-22-31)42-40(32-23-11-4-12-24-32)36-28-16-15-27-35(36)38(41(37)42)30-19-7-2-8-20-30/h1-28H

Clave InChI

YYMBJDOZVAITBP-UHFFFAOYSA-N

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Descripción general

TGA/DSC Lot specific traces available upon request

Aplicación

Organic electronic material useful as OLED dopant (red, λem = 550nm) and as p-type organic semiconductor. Carrier mobilities of 8-20 cm2/ Vs can be achieved in OFETs based on single crystals of sublimed rubrene.
Reagent for chemiluminescence research and for transition metal complex ligation.

Código de clase de almacenamiento

11 - Combustible Solids

Clase de riesgo para el agua (WGK)

WGK 3

Punto de inflamabilidad (°F)

Not applicable

Punto de inflamabilidad (°C)

Not applicable

Equipo de protección personal

Eyeshields, Gloves, type N95 (US)

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Certificados de análisis (COA)

Lot/Batch Number
0000299443
0000299443
0000141324
0000157898
0000157898

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Morpurgo, A. F. et al.
Physica Status Solidi (A): Applied Research, 201, 1302-1302 (2004)
Alexander S Bieber et al.
The Journal of chemical physics, 153(8), 084703-084703 (2020-09-03)
Triplet-triplet annihilation-based photon upconversion (UC) using bulk perovskite sensitizers has been previously shown to facilitate efficient UC at low fluences. However, the fabrication of the UC devices has not been fully optimized; thus, there is room for improvement. Here, we
N R Armstrong et al.
Annual review of physical chemistry, 52, 391-422 (2001-04-28)
Electrochemical processes leading to light emission are reviewed, with emphasis on aspects of this subject relevant to the understanding and optimization of electrogenerated luminescence (EL) in organic thin-film materials. The basic energetic requirements of light emission from electrochemically initiated solution
V Podzorov et al.
Physical review letters, 95(22), 226601-226601 (2005-12-31)
We have observed the Hall effect in the field-induced accumulation layer on the surface of single-crystal samples of a small-molecule organic semiconductor rubrene. The Hall mobility muH increases with decreasing temperature in both the intrinsic (high-temperature) and trap-dominated (low-temperature) conduction
Y Chen et al.
Advanced materials (Deerfield Beach, Fla.), 24(20), 2679-2684 (2012-04-14)
The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the
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