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545007

Sigma-Aldrich

Tantalum

Sinónimos:

Ta

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About This Item

Fórmula empírica (notación de Hill):
Ta
Número de CAS:
7440-25-7
Peso molecular:
180.95
MDL number:
MFCD00011252
UNSPSC Code:
12141741
PubChem Substance ID:
24878801
NACRES:
NA.23

vapor pressure

<0.01 mmHg ( 537.2 °C)

Quality Level

100

autoignition temp.

572 °F

resistivity

13.5 μΩ-cm, 20°C

bp

5425 °C (lit.)

mp

2996 °C (lit.)

density

16.69 g/cm3 (lit.)

SMILES string

[Ta]

InChI

1S/Ta

InChI key

GUVRBAGPIYLISA-UHFFFAOYSA-N

Application

Tantalum powder, a semiconducting material, is used as a photocatalyst and shows high efficiency in the solar splitting of water. Its biocompatibility makes it useful in the development of medical devices and implants.

pictograms

Flame
GHS02

signalword

Danger

hcodes

H228

Hazard Classifications

Flam. Sol. 1

Storage Class

4.1B - Flammable solid hazardous materials

wgk_germany

nwg

flash_point_f

Not applicable

flash_point_c

Not applicable

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Tantalum-based semiconductors for solar water splitting
Zhang P, et al.
Chemical Society Reviews, 43(13), 4395-4422 (2014)
Additively manufactured porous tantalum implants
Wauthle R, et al.
Acta Biomaterialia, 14(13), 217-225 (2015)
S Nag et al.
Journal of the mechanical behavior of biomedical materials, 16, 21-28 (2012-11-10)
Microstructure and mechanical properties of laser deposited complex quaternary Ti-34Nb-7Zr-7Ta (all wt%), an orthopedic load-bearing implant alloy, has been investigated in detail in both as-deposited as well as heat-treated (β-solutionized and quenched) conditions. The difference in stress-strain behavior of this
Thomas Larzon et al.
Vascular, 21(2), 87-91 (2013-03-20)
Control of back bleeding from the hypogastric artery into the aneurysm after endovascular aneurysm repair (EVAR) of a ruptured aorto-iliac aneurysm may be necessary in order to avoid a type II endoleak. It is an emergency situation and selective catheterization
Hany A El-Sayed et al.
Nanoscale, 5(4), 1494-1498 (2013-01-23)
Ta oxide nanotubes (NTs) were formed by the anodization of Ta at 15 V in a solution of concentrated sulfuric acid containing 0.8-1.0 M hydrofluoric acid. To study the initial stages of NT formation, FESEM images of samples anodized for
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