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378097

Sigma-Aldrich

Silicon carbide

-200 mesh particle size

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About This Item

Linear Formula:
SiC
CAS Number:
409-21-2
Molecular Weight:
40.10
EC Number:
206-991-8
MDL number:
MFCD00049531
UNSPSC Code:
12352300
PubChem Substance ID:
24863541
NACRES:
NA.23

form

powder

Quality Level

100

particle size

-200 mesh

mp

2700 °C (lit.)

density

3.22 g/mL at 25 °C (lit.)

SMILES string

[C-]#[Si+]

InChI

1S/CSi/c1-2

InChI key

HBMJWWWQQXIZIP-UHFFFAOYSA-N

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General description

Silicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of electronic and optoelectronic applications.

Application

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices(OLEDs), UV detectors, high temperature electronics (nuclear electronics), high frequency devices

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
MKCV4972
MKCV4973
MKCS3253
MKCP6859
MKCL9342

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Properties of silicon carbide (1995)
Development of SiC-Si composites with fine-grained SiC microstructures
Wilhelm M, et al.
J. Eur. Ceram. Soc., 19(12), 2155-2163 (1999)
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
High efficiency GaN-based LEDs and lasers on SiC
Edmond J, et al.
Journal of Crystal Growth, 272(1-4), 242-250 (2004)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
Whitaker B, et al.
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
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