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378097

Sigma-Aldrich

Silicon carbide

-200 mesh particle size

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About This Item

Linear Formula:
SiC
CAS Number:
409-21-2
Molecular Weight:
40.10
EC Number:
206-991-8
MDL number:
MFCD00049531
UNSPSC Code:
12352300
PubChem Substance ID:
24863541
NACRES:
NA.23

form

powder

particle size

-200 mesh

mp

2700 °C (lit.)

density

3.22 g/mL at 25 °C (lit.)

SMILES string

[C-]#[Si+]

InChI

1S/CSi/c1-2

InChI key

HBMJWWWQQXIZIP-UHFFFAOYSA-N

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General description

Silicon carbide (SiC) is a semiconductor based material that consists of a closed packed stacking of double layers of silicon and carbon. It has an excellent thermo-mechanical property that makes it useful in a variety of electronic and optoelectronic applications.

Application

SiC is majorly used as a base material for applications such as micro-structures, opto-electronic devices(OLEDs), UV detectors, high temperature electronics (nuclear electronics), high frequency devices

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Properties of silicon carbide (1995)
Development of SiC-Si composites with fine-grained SiC microstructures
Wilhelm M, et al.
J. Eur. Ceram. Soc., 19(12), 2155-2163 (1999)
Fundamentals of silicon carbide technology: growth, characterization, devices and applications (2014)
A high-density, high-efficiency, isolated on-board vehicle battery charger utilizing silicon carbide power devices
Whitaker B, et al.
IEEE Transactions on Power Electronics, 29(5), 2606-2617 (2013)
Optical polarization of nuclear spins in silicon carbide
Falk AL, et al.
Physical Review Letters, 114(24), 247603-247603 (2015)
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