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452378

Sigma-Aldrich

Tellurium

shot, ≤2 mm, 99.999% trace metals basis

Synonym(s):

Tellurium element

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About This Item

Empirical Formula (Hill Notation):
Te
CAS Number:
Molecular Weight:
127.60
EC Number:
MDL number:
UNSPSC Code:
12141913
PubChem Substance ID:
NACRES:
NA.23

Assay

99.999% trace metals basis

form

shot

resistivity

5.8-33 μΩ-cm, 20°C

particle size

≤2 mm

bp

990 °C (lit.)

mp

450 °C (lit.)

density

6.24 g/mL at 25 °C (lit.)

SMILES string

[Te]

InChI

1S/Te

InChI key

PORWMNRCUJJQNO-UHFFFAOYSA-N

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Other Notes

Contains low oxide

Pictograms

Health hazardExclamation mark

Signal Word

Danger

Hazard Classifications

Acute Tox. 4 Inhalation - Aquatic Chronic 4 - Lact. - Repr. 1B - Skin Sens. 1B

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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The effect of single maternal subcutaneous (s.c.) injection of 0.12 mg/kg diphenyl ditelluride, (PhTe)2, diluted in canola oil at days 6, 10 or 17 of gestation were evaluated in Wistar rats. The reduction of body weight gain was statistically significant
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Despite being disparaged for their malodorous and toxic demeanour, compounds of selenium, a bio-essential element, and tellurium, offer possibilities as therapeutic agents. Herein, their potential use as drugs, for example, as anti-viral, anti-microbial, anti-inflammatory agents, etc., will be surveyed along
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The octave-spanning spectrum was generated in a tellurite glass based microstructured fiber pumped by a 528 MHz repetition rate Yb:fiber ring laser without amplification. The laser achieved 40% output optical-to-optical efficiency with the output power of 410 mW. By adjusting
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Optics express, 21(6), 7799-7810 (2013-04-03)
ZnTe is an important p-type semiconductor with great applications as field-effect transistors and photodetectors. In this paper, individual ZnTe nanowires based field-effect transistors was fabricated, showing evident p-type conductivity with an effect mobility of 11.3 cm(2)/Vs. Single ZnTe nanowire based

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