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Sigma-Aldrich

Silicon tetraacetate

98%

Synonym(s):

Tetraacetoxysilane

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About This Item

Linear Formula:
Si(OCOCH3)4
CAS Number:
562-90-3
Molecular Weight:
264.26
Beilstein:
994868
EC Number:
209-239-7
MDL number:
MFCD00026184
UNSPSC Code:
12352100
PubChem Substance ID:
24861298
NACRES:
NA.22

vapor density

>1 (vs air)

Assay

98%

bp

148 °C/5 mmHg (lit.)

mp

111-115 °C (lit.)

storage temp.

−20°C

SMILES string

CC(=O)O[Si](OC(C)=O)(OC(C)=O)OC(C)=O

InChI

1S/C8H12O8Si/c1-5(9)13-17(14-6(2)10,15-7(3)11)16-8(4)12/h1-4H3

InChI key

YZVRVDPMGYFCGL-UHFFFAOYSA-N

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General description

Silicon tetraacetate is an alternative to silicon hydride and alkoxide for low-temperature SiO2 production. Silicon tetraacetate reacts with ethanol in absence of water to form silica gel and ethyl acetate. Silicon tetraacetate is reported as a sol-gel precursor.

Application

Silicon tetraacetate may be used in the preparation of silicon dioxide thin films by a direct photochemical vapor deposition method. It may be used as starting material in the synthesis of silicon complexes with monofunctional bidentate Schiff bases.

Pictograms

Corrosion
GHS05

Signal Word

Danger

Hazard Statements

H314

Hazard Classifications

Skin Corr. 1B

Storage Class Code

8A - Combustible corrosive hazardous materials

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Synthesis of some ketimine derivatives of silicon (IV).
Singh RV and Tandon JP.
J. Prakt. Chem., 321(1), 151-158 (1979)
Silicon dioxide thin films prepared by chemical vapor deposition from silicon tetraacetate.
Maruyama T and Shionoya J.
Jpn J. App. Phys., Part I, 28(12A), L2253-L2253 (1989)
Silicon tetraacetate as a sol-gel precursor.
Coltrain BK, et al.
Journal of Sol-Gel Science and Technology, 3(2), 83-90 (1994)

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