Toutes les photos(1)

Principaux documents

COO/COA

Voir toute la documentation

266779

Hafnium

Name: Hafnium
Brand: ALDRICH

wire, diam. 1.0 mm, ≥99.9% trace metals basis (purity excludes ~2% zirconium)

Synonyme(s) :

Celtium, Hafnium element

Se connecterpour consulter vos tarifs contractuels et ceux de votre entreprise/organisme

Toutes les photos(1)

About This Item

Formule empirique (notation de Hill):

Numéro CAS:

7440-58-6

Poids moléculaire :

178.49

Numéro CE :

231-166-4

Numéro MDL:

MFCD00011032

Code UNSPSC :

12352300

ID de substance PubChem :

24856159

Niveau de qualité

100

Essai

≥99.9% trace metals basis (purity excludes ~2% zirconium)

Forme

wire

Résistivité

29.6 μΩ-cm, 0°C

Diamètre

1.0 mm

pb

4602 °C (lit.)

Pf

2227 °C (lit.)

Densité

13.3 g/cm³ (lit.)

Chaîne SMILES

[Hf]

InChI

1S/Hf

Clé InChI

VBJZVLUMGGDVMO-UHFFFAOYSA-N

Vous recherchez des produits similaires ? Visite Guide de comparaison des produits

Quantité

2 g = 20 cm

Code de la classe de stockage

13 - Non Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 1

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)

Faites votre choix parmi les versions les plus récentes :

Certificats d'analyse (COA)

Lot/Batch Number

Vous ne trouvez pas la bonne version ?

Si vous avez besoin d'une version particulière, vous pouvez rechercher un certificat spécifique par le numéro de lot.

Rechercher un(e) COA

Déjà en possession de ce produit ?

Retrouvez la documentation relative aux produits que vous avez récemment achetés dans la Bibliothèque de documents.

Consulter la Bibliothèque de documents

Nanoscale radiotherapy with hafnium oxide nanoparticles.

Laurence Maggiorella et al.

Future oncology (London, England), 8(9), 1167-1181 (2012-10-04)

There is considerable interest in approaches that could improve the therapeutic window of radiotherapy. In this study, hafnium oxide nanoparticles were designed that concentrate in tumor cells to achieve intracellular high-energy dose deposit. Conventional methods were used, implemented in different

Hf(IV)-catalyzed enantioselective epoxidation of N-alkenyl sulfonamides and N-tosyl imines.

José Luis Olivares-Romero et al.

Journal of the American Chemical Society, 134(12), 5440-5443 (2012-03-17)

Asymmetric epoxidation of allylic and homoallylic amine derivatives catalyzed by Hf(IV)-bishydroxamic acid complexes is described. Under similar conditions, aldimine and ketimine produced oxaziridines. The sulfonyl group is demonstrated to be an effective directing group for these transformations.

High-performance printed carbon nanotube thin-film transistors array fabricated by a nonlithography technique using hafnium oxide passivation layer and mask.

Suresh Kumar Raman Pillai et al.

ACS applied materials & interfaces, 4(12), 7047-7054 (2012-12-01)

The large-scale application of semiconducting single-walled carbon nanotubes (s-SWCNTs) for printed electronics requires scalable, repeateable, as well as noncontaminating assembly techniques. Previously explored nanotube deposition methods include serial methods such as inkjet printing and parallel methods such as spin-coating with

Transparent nanoscale floating gate memory using self-assembled bismuth nanocrystals in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) pyrochlore thin films grown at room temperature.

Hyun-June Jung et al.

Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)

Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.

O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy.

Gerald Lucovsky et al.

Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)

Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect

Afficher tous les articles scientifiques apparentés

Notre équipe de scientifiques dispose d'une expérience dans tous les secteurs de la recherche, notamment en sciences de la vie, science des matériaux, synthèse chimique, chromatographie, analyse et dans de nombreux autres domaines..

Contacter notre Service technique