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255475

Sigma-Aldrich

Boron nitride

powder, ~1 μm, 98%

Synonyme(s) :

Boron mononitride, Hexagonal boron nitride, White graphite

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About This Item

Formule linéaire :
BN
Numéro CAS:
10043-11-5
Poids moléculaire :
24.82
Numéro CE :
233-136-6
Numéro MDL:
MFCD00011317
Code UNSPSC :
12352300
ID de substance PubChem :
24855457
Nomenclature NACRES :
NA.23

Pureté

98%

Forme

powder

Taille des particules

~1 μm

Densité

2.29 g/mL at 25 °C (lit.)

Chaîne SMILES 

B#N

InChI

1S/BN/c1-2

Clé InChI

PZNSFCLAULLKQX-UHFFFAOYSA-N

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Catégories apparentées

Description générale

Hexagonal boron nitride (hBN) has a layered structure similar to graphite and can be exfoliated as singlelayered BN sheets. hBN has applications in catalysts, optoelectronics and semiconductor devices. Boron nitride posseses high thermal conductivity of approximately 400W/mK at 300K.

Application

Hexagonal boron nitride powder has been used:
  • In the fabrication and luminescence study of monolayered boron nitride quantum dots.
  • Rare earth boron complexes.
  • Boron nitride filled polybenzoxazine system as a thermally conducting molding components for electronic packaging applications.
  • Boron containing ceramic products.
  • As a starting material to form BN nanotubes.
  • To load silicone rubber and its consecutive effect on its thermal, mechanical and morphological properties was studied.

Code de la classe de stockage

13 - Non Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 3

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

dust mask type N95 (US), Eyeshields, Gloves

Certificats d'analyse (COA)

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Consulter la Bibliothèque de documents

A Erba et al.
The Journal of chemical physics, 138(5), 054906-054906 (2013-02-15)
The vibration spectrum of single-walled zigzag boron nitride (BN) nanotubes is simulated with an ab initio periodic quantum chemical method. The trend towards the hexagonal monolayer (h-BN) in the limit of large tube radius R is explored for a variety
Ki Kang Kim et al.
ACS nano, 6(10), 8583-8590 (2012-09-14)
Hexagonal boron nitride (h-BN) is a promising material as a dielectric layer or substrate for two-dimensional electronic devices. In this work, we report the synthesis of large-area h-BN film using atmospheric pressure chemical vapor deposition on a copper foil, followed
A solid-state process for formation of boron nitride nanotubes
Chen Y, et al.
Applied Physics Letters, 74(20) (1999)
Vibro-fluidization of fine boron nitride powder at low pressure Jeffrey R. Wank, et al., Powder technology
Wank JR, et al.
Powder Technology, 121, 195-204 (2001)
Augustinus Stijn M Goossens et al.
Nano letters, 12(9), 4656-4660 (2012-08-22)
We report on the fabrication and measurement of nanoscale devices that permit electrostatic confinement in bilayer graphene on a substrate. The graphene bilayer is sandwiched between hexagonal boron nitride bottom and top gate dielectrics. Top gates are patterned such that
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