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Sigma-Aldrich

Methyltrichlorosilane

deposition grade, ≥98% (GC), ≥99.99% (as metals)

Synonym(s):

Trichloro(methyl)silane

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About This Item

Linear Formula:
CH3SiCl3
CAS Number:
Molecular Weight:
149.48
Beilstein:
1361381
EC Number:
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23

grade

deposition grade

vapor density

5.2 (vs air)

vapor pressure

150 mmHg ( 25 °C)

Assay

≥98% (GC)
≥99.99% (as metals)

form

liquid

autoignition temp.

>760 °F

expl. lim.

11.9 %

refractive index

n20/D 1.411 (lit.)

bp

66 °C (lit.)

density

1.273 g/mL at 25 °C (lit.)

SMILES string

C[Si](Cl)(Cl)Cl

InChI

1S/CH3Cl3Si/c1-5(2,3)4/h1H3

InChI key

JLUFWMXJHAVVNN-UHFFFAOYSA-N

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Signal Word

Danger

Hazard Classifications

Acute Tox. 3 Inhalation - Acute Tox. 4 Dermal - Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1A - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

3 - Flammable liquids

WGK

WGK 1

Flash Point(F)

46.4 °F - closed cup

Flash Point(C)

8 °C - closed cup


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W H Mullen et al.
Clinica chimica acta; international journal of clinical chemistry, 157(2), 191-198 (1986-06-15)
An enzyme electrode is described based upon the enzyme lactate oxidase (EC 1.1.3.2) coupled to an H2O2 sensor. Use of an organosilane-treated microporous membrane over the enzyme layer, allows responses linear to 18 mmol/l L-lactate with response times of 1-3
Yingbin Ge et al.
The journal of physical chemistry. A, 111(8), 1475-1486 (2007-02-06)
The kinetics for the previously proposed 114-reaction mechanism for the chemical vapor deposition (CVD) process that leads from methyltrichlorosilane (MTS) to silicon carbide (SiC) are examined. Among the 114 reactions, 41 are predicted to proceed with no intervening barrier. For
Ildikó Szabó et al.
Biopolymers, 88(1), 20-28 (2006-10-26)
Rearrangement of disulfide bonds during the synthesis of alpha-conotoxin GI using PhS(O)Ph/CH(3)SiCl(3) oxidation procedure was observed. We have demonstrated that the protecting scheme (order of acetamidomethyl (Acm) and (t)Bu protecting groups) of the Cys residues as well as the reaction
Yingbin Ge et al.
The journal of physical chemistry. A, 114(6), 2384-2392 (2010-01-29)
The rate constants for the gas-phase reactions in the silicon carbide chemical vapor deposition of methyltrichlorosilane (Ge, Y. B.; Gordon, M. S.; Battaglia, F.; Fox, R. O. J. Phys. Chem. A 2007, 111, 1462.) were calculated. Transition state theory was
Yingbin Ge et al.
The journal of physical chemistry. A, 111(8), 1462-1474 (2007-02-06)
Structures and energies of the gas-phase species produced during and after the various unimolecular decomposition reactions of methyltrichlorosilane (MTS) with the presence of H2 carrier gas were determined using second-order perturbation theory (MP2). Single point energies were obtained using singles

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