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About This Item
Linear Formula:
Cl2SiH2
CAS Number:
Molecular Weight:
101.01
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:
Recommended Products
vapor density
3.5 (vs air)
vapor pressure
1254 mmHg ( 20 °C)
description
film resistivity > 50 Ω-cm
Assay
≥99.99% trace metals basis
autoignition temp.
136 °F
expl. lim.
99 %
bp
8.3 °C (lit.)
mp
−122 °C (lit.)
SMILES string
Cl[SiH2]Cl
InChI
1S/Cl2H2Si/c1-3-2/h3H2
InChI key
MROCJMGDEKINLD-UHFFFAOYSA-N
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General description
Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.
Application
DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B
Supplementary Hazards
Storage Class Code
2A - Gases
WGK
WGK 1
Flash Point(F)
-34.6 °F
Flash Point(C)
-37 °C
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Dichlorosilane-derived nano-silicon inside hollow carbon spheres as a high-performance anode for Li-ion batteries.
Jaumann T, et al.
Journal of Material Chemistry C, 5(19), 9262-9271 (2017)
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Lu Xie et al.
Nanomaterials (Basel, Switzerland), 10(9) (2020-09-03)
With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short
Selective epitaxial growth using dichlorosilane and silane by low pressure chemical vapor deposition.
Zhang W, et al.
Microelectronic Engineering, 73, 514-518 (2004)
High growth rate 4H−SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor.
Chowdhury I, et al.
Journal of Crystal Growth, 316(1), 60-66 (2011)
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