357227
Molybdenum
foil, thickness 0.025 mm, ≥99.9% trace metals basis
Synonym(s):
Molybdenum element
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About This Item
Empirical Formula (Hill Notation):
Mo
CAS Number:
Molecular Weight:
95.94
MDL number:
UNSPSC Code:
12141727
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
Quality Level
Assay
≥99.9% trace metals basis
form
foil
resistivity
5.0 μΩ-cm, 20°C
thickness
0.025 mm
bp
4612 °C (lit.)
mp
2617 °C (lit.)
density
10.3 g/mL at 25 °C (lit.)
SMILES string
[Mo]
InChI
1S/Mo
InChI key
ZOKXTWBITQBERF-UHFFFAOYSA-N
General description
Mo foils are lightweight and flexible, hence desirable for space applications. Mo foil may be used as a substrate for the fabrication of CdS-CdTe solar cells. Interaction of selenium, arsenic hydrides, stibine and bismuthine with Mo foil was investigated by atomic absorption spectroscopy. Mo foils may be used to generate metal diffusion bonding in silicon carbide/silicon carbide (SiC/SiC) joints.
Quantity
150 × 150 mm (approximately 5.8 g)
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Certificates of Analysis (COA)
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Flexural Strength and Shear Strength of Silicon Carbide to Silicon Carbide Joints Fabricated by a Molybdenum Diffusion Bonding Technique.
Cockeram BV, et al.
Journal of the American Ceramic Society. American Ceramic Society, 88(7), 1892-1899 (2006)
Design issues in the fabrication of CdS?CdTe solar cells on molybdenum foil substrates.
Singh VP and McClure JC
Solar Energy Materials and Solar Cells, 76, 363-385 (2003)
Trapping of hydride forming elements within miniature electrothermal devices. Part 3. Investigation of collection of antimony and bismuth on a
molybdenum foil strip following hydride generation
Krejci P, et al.
Spectrochimica Acta. Part B: Atomic Spectroscopy, 61, 444-449 (2006)
Trapping of hydride forming elements within miniature electrothermal devices: part I. investigation of collection of arsenic and selenium hydrides on a molybdenum foil strip
Docekal B and Selecka A
Spectrochimica Acta. Part B: Atomic Spectroscopy, 59(4), 487-495 (2004)
Measurement of mobility in dual-gated MoS₂ transistors.
Michael S Fuhrer et al.
Nature nanotechnology, 8(3), 146-147 (2013-03-06)
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