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740942

Sigma-Aldrich

Indium antimonide

≥99.99% trace metals basis

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About This Item

Linear Formula:
InSb
CAS Number:
Molecular Weight:
236.58
EC Number:
MDL number:
UNSPSC Code:
12352300
PubChem Substance ID:

Assay

≥99.99% trace metals basis

form

crystals

SMILES string

[In]#[Sb]

InChI

1S/In.Sb

InChI key

WPYVAWXEWQSOGY-UHFFFAOYSA-N

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General description

Indium antimonide (InSb) is a semiconductor material with good electron mobility and saturation velocity. It can be prepared typically by ball-milling indium (In) and antimony (Sb) metals in a 1:1 ratio.

Application

InSb can be used for a variety of applications such as superconductors, thermoelectric materials, and lithium-ion batteries.

Pictograms

Exclamation markEnvironment

Signal Word

Warning

Hazard Statements

Hazard Classifications

Acute Tox. 4 Inhalation - Acute Tox. 4 Oral - Aquatic Chronic 2

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable


Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Electrochemistry and in-situ X-ray diffraction of InSb in lithium batteries
Johnson CS, et al.
Electrochemical Communications, 94(10), 102114-102114 (2000)
Intermetallic Insertion Electrodes with a Zinc Blende-Type Structure for Li Batteries: A Study of Li x InSb
Vaughey JT, et al.
Electrochemical and Solid-State Letters, 121-124 (1999)
High performance In x Ce y Co 4 Sb 12 thermoelectric materials with in situ forming nanostructured InSb phase
Li H, et al.
Applied Physics Letters, 336(6084), 1003-1007 (2009)
Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
Mourik V, et al.
Science, 3(1), 13-13 (2012)
Sareminia, Gh.; Hajian, M.; Simchi, H.; Eminov, Sh.; Moradi, M.
Infrared Physics &Technology, 53, 315-315 (2010)

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