Skip to Content
Merck
All Photos(2)

Documents

343250

Sigma-Aldrich

Silicon

pieces, 99.95% trace metals basis

Sign Into View Organizational & Contract Pricing
All Photos(2)

About This Item

Linear Formula:
Si
CAS Number:
7440-21-3
Molecular Weight:
28.09
EC Number:
231-130-8
MDL number:
MFCD00085311
UNSPSC Code:
12141911
PubChem Substance ID:
24861139
NACRES:
NA.23

Assay

99.95% trace metals basis

form

pieces

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

Looking for similar products? Visit Product Comparison Guide

Related Categories

Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

Already Own This Product?

Find documentation for the products that you have recently purchased in the Document Library.

Visit the Document Library

Customers Also Viewed

Slide 1 of 6

1 of 6

Silicon powder, max. particle size 45 micron, weight 200 g, purity 99.5%

GF38819571

Silicon

Silicon lump, 25 mm max. lump size, weight 50 g, purity 99.999%

GF15703477

Silicon

Silicon wafer (single side polished), <100>, N-type, contains no dopant, diam. × thickness 2 in. × 0.5 mm

Sigma-Aldrich

646687

Silicon

Silicon rod, 100mm, diameter 2.0mm, crystalline, 100%

GF64686998

Silicon

Silicon powder, 45 max. part. size (micron), weight 50 g, purity 99.5%

GF79775577

Silicon

Silicon powder, 45 max. part. size (micron), weight 100 g, high purity 99.998%

GF64953614

Silicon

Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
Hyunhui Kim et al.
Journal of nanoscience and nanotechnology, 13(5), 3559-3563 (2013-07-19)
Silicon sheets were fabricated by a new fabricating method, spin casting with various rotation speeds of the graphite mold. The microstructure of spin-cast silicon sheets were investigated using an electron probe microanalyzer (EPMA) and scanning electron microscope/electron backscatter diffraction/orientation image
View All Related Papers

Articles

Recent Developments in Silicon Anode Materials for High Performance Lithium-Ion Batteries

Recent demand for electric and hybrid vehicles, coupled with a reduction in prices, has caused lithium-ion batteries (LIBs) to become an increasingly popular form of rechargeable battery technology.

Silicides: Promising Thermoelectrics

Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.

Silicides: Promising Thermoelectrics

Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.

Silicides: Promising Thermoelectrics

Higher transition metal silicides are ideal for anisotropic thermoelectric conversion due to their Seebeck coefficient anisotropy and mechanical properties.

See All

Our team of scientists has experience in all areas of research including Life Science, Material Science, Chemical Synthesis, Chromatography, Analytical and many others.

Contact Technical Service