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GRFETS20

Sigma-Aldrich

Graphene FET chip

S20

Sinónimos:

2-probe FET device, 2-probe Graphene FET sensor, Chemical gated Graphene FET, GFET S20, Graphene field effect transistor chip S20

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About This Item

Código UNSPSC:
43211915
NACRES:
NA.23

descripción

Absolute Maximum Ratings
Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm2
Chip dimensions: 10 mm x 10 mm
Chip thickness: 675 μm
Dirac point: < 50 V
Yield >75%
Encapsulation: 50 nm Al2O3 + 100 nm Si3N4
Gate oxide materials: 90 nm SiO2
Graphene field-effect mobility: >1000 cm2/V·s
Monolayer CVD grown Graphene based 2-probe field effect transistors (FET).
Number of devices per chip: 12
Resistivity of substrate: 1-10 Ω·cm
Metallization: Chromium/Gold-Palladium 2/50 nm

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Descripción general

Device configuration:

The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.
Graphene FET chip (GFET-S20 chip) is a graphene based field effect transistor which can be coated on silicon substrate by atmospheric pressure chemical vapor deposition (CVD). It also has similar gate insulators in the source and drain.

Aplicación

  • Bioelectronics
  • FET based sensor research for active materials deposited on graphene
  • Clinical applications
  • Biosensors
GFET-S20 chip can be used as a biosensor and a chemical sensor for biological applications.

Características y beneficios

Device Features:

  • State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene
  • Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment
  • Perfect platform device for new sensor research and development
  • 12 individual GFETs per chip
  • A central gate electrode

Código de clase de almacenamiento

11 - Combustible Solids

Clase de riesgo para el agua (WGK)

nwg

Punto de inflamabilidad (°F)

Not applicable

Punto de inflamabilidad (°C)

Not applicable

Certificados de análisis (COA)

Busque Certificados de análisis (COA) introduciendo el número de lote del producto. Los números de lote se encuentran en la etiqueta del producto después de las palabras «Lot» o «Batch»

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Review-Field-Effect Transistor Biosensing: Devices and Clinical Applications
Syu Y C, et al.
ECS journal of solid state science and technology : JSS, 7(7), Q3196-Q3207 (2018)
Graphene field effect transistors on flexible substrate: stable process and high RF performance
2016 11th European microwave integrated circuits conference, 7(1), 165-168 (2016)
Improved sensitivity of a graphene FET biosensor using porphyrin linkers
Kawata T, et al.
Japanese Journal of Applied Physics, 57(6), 065103/1-065103/4 (2018)
Michael T Hwang et al.
Advanced materials (Deerfield Beach, Fla.), e1802440-e1802440 (2018-07-10)
Electronic DNA-biosensor with a single nucleotide resolution capability is highly desirable for personalized medicine. However, existing DNA-biosensors, especially single nucleotide polymorphism (SNP) detection systems, have poor sensitivity and specificity and lack real-time wireless data transmission. DNA-tweezers with graphene field effect
MoS2-graphene heterostructures as efficient organic compounds sensing 2D materials
Pham T, et al.
Carbon, 142, 504- 512 (2019)
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