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725544

Sigma-Aldrich

Tetrakis(ethylmethylamido)hafnium(IV)

packaged for use in deposition systems

Synonym(s):

TEMAH, Tetrakis(ethylmethylamino)hafnium(IV)

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About This Item

Linear Formula:
[(CH3)(C2H5)N]4Hf
CAS Number:
352535-01-4
Molecular Weight:
410.90
MDL number:
MFCD03427130
UNSPSC Code:
12352103
PubChem Substance ID:
329764168
NACRES:
NA.23

Quality Level

100

form

liquid

reaction suitability

core: hafnium
reagent type: catalyst

bp

78 °C/0.01 mmHg (lit.)

mp

<-50 °C

density

1.324 g/mL at 25 °C (lit.)

storage temp.

2-8°C

SMILES string

CCN(C)[Hf](N(C)CC)(N(C)CC)N(C)CC

InChI

1S/4C3H8N.Hf/c4*1-3-4-2;/h4*3H2,1-2H3;/q4*-1;+4

InChI key

NPEOKFBCHNGLJD-UHFFFAOYSA-N

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General description

Tetrakis(ethylmethylamido)hafnium(IV) (TEMAH) is a colorlessliquid, which freezes at -50 °C and boils around 78 °C at 0.1 Torr. It is air-and water-sensitive.

Application

Precursors Packaged for Depositions Systems
TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO2) and hafnium zirconium oxide (Hf1-xZrxO2), which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.

TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS2. TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.

Features and Benefits

This TEMAH is packaged in a Swagelok stainless-steeldeposition system convenient for connecting to ALD systems.

  • Steel cylinder connected to 316 stainless steelball-valve
  • 1/4 inch male Swagelok VCR connections

Signal Word

Danger

Hazard Statements

H225,H260,H302,H314,H335

Hazard Classifications

Acute Tox. 4 Oral - Eye Dam. 1 - Flam. Liq. 2 - Skin Corr. 1B - STOT SE 3 - Water-react 1

Target Organs

Respiratory system

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

51.8 °F - closed cup

Flash Point(C)

11 °C - closed cup

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Certificates of Analysis (COA)

Lot/Batch Number
SHBC4705V
SHBH4669V
SHBC3852V
20099EJV
16196JM

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Martin Rose et al.
ACS applied materials & interfaces, 2(2), 347-350 (2010-04-02)
The mechanisms of technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al(2)O(3) and HfO(2) thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor.
Jaehyun Yang et al.
ACS applied materials & interfaces, 5(11), 4739-4744 (2013-05-21)
We report on the effect of oxygen plasma treatment of two-dimensional multilayer MoS2 crystals on the subsequent growth of Al2O3 and HfO2 films, which were formed by atomic layer deposition (ALD) using trimethylaluminum and tetrakis-(ethylmethylamino)hafnium metal precursors, respectively, with water
Luqi Tu et al.
Nature communications, 11(1), 101-101 (2020-01-05)
Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS2) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS2 photodetectors have focused
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water.
Kukli K, et al.
Chem. Vap. Deposition, 199-204 (2002)

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