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647705

Sigma-Aldrich

Silicon

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

Synonyme(s) :

Silicon element

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About This Item

Formule linéaire :
Si
Numéro CAS:
7440-21-3
Poids moléculaire :
28.09
Numéro MDL:
MFCD00085311
Code UNSPSC :
12352300
ID de substance PubChem :
24883420
Nomenclature NACRES :
NA.23

Forme

crystalline (cubic (a = 5.4037))
wafer

Niveau de qualité

100

Contient

boron as dopant

Diam. × épaisseur

2 in. × 0.3 mm

Point d'ébullition

2355 °C (lit.)

Pf

1410 °C (lit.)

Densité

2.33 g/mL at 25 °C (lit.)

Propriétés du semi-conducteur

<111>, P-type

Chaîne SMILES 

[Si]

InChI

1S/Si

Clé InChI

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

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Catégories apparentées

Propriétés physiques

0 vortex defects. Etch pitch density (EPD) < 100 (cm-2). Resistivity 10-3 - 40 Ωcm
Oxygen content: <= 1~1.8 x 1018 /cm3; Carbon content: <= 5 x 1016 /cm3; Boule diameter: 1~8 ″

Code de la classe de stockage

13 - Non Combustible Solids

Classe de danger pour l'eau (WGK)

WGK 2

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Équipement de protection individuelle

Eyeshields, Gloves, type N95 (US)

Certificats d'analyse (COA)

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634867

Silicon dioxide

Gold coated silicon wafer 99.999% (Au), layer thickness 1000&#160;Å, 99.99% (Ti)

Sigma-Aldrich

643262

Gold coated silicon wafer

Silicon pieces, 99.95% trace metals basis

Sigma-Aldrich

343250

Silicon

Pil Ju Ko et al.
Journal of nanoscience and nanotechnology, 13(4), 2451-2460 (2013-06-15)
The physical properties of porous materials are being exploited for a wide range of applications including optical biosensors, waveguides, gas sensors, micro capacitors, and solar cells. Here, we review the fast, easy and inexpensive electrochemical anodization based fabrication porous silicon
Jaewoo Lee et al.
Journal of nanoscience and nanotechnology, 13(5), 3495-3499 (2013-07-19)
A spin-casting process for fabricating polycrystalline silicon sheets for use as solar cell wafers is proposed, and the parameters that control the sheet thickness are investigated. A numerical study of the fluidity of molten silicon indicates that the formation of
Seungil Park et al.
Journal of nanoscience and nanotechnology, 13(5), 3397-3402 (2013-07-19)
We investigated the thin film growths of hydrogenated silicon by hot-wire chemical vapor deposition with different flow rates of SiH4 and H2 mixture ambient and fabricated thin film solar cells by implementing the intrinsic layers to SiC/Si heterojunction p-i-n structures.
Youngin Jeon et al.
Journal of nanoscience and nanotechnology, 13(5), 3350-3353 (2013-07-19)
Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
Jae Cheol Shin et al.
Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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