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545007

Sigma-Aldrich

Tantalum

Synonyme(s) :

Ta

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About This Item

Formule empirique (notation de Hill):
Ta
Numéro CAS:
7440-25-7
Poids moléculaire :
180.95
Numéro MDL:
MFCD00011252
Code UNSPSC :
12141741
ID de substance PubChem :
24878801
Nomenclature NACRES :
NA.23

Pression de vapeur

<0.01 mmHg ( 537.2 °C)

Niveau de qualité

100

Température d'inflammation spontanée

572 °F

Résistivité

13.5 μΩ-cm, 20°C

Point d'ébullition

5425 °C (lit.)

Pf

2996 °C (lit.)

Densité

16.69 g/cm3 (lit.)

Chaîne SMILES 

[Ta]

InChI

1S/Ta

Clé InChI

GUVRBAGPIYLISA-UHFFFAOYSA-N

Application

Tantalum powder, a semiconducting material, is used as a photocatalyst and shows high efficiency in the solar splitting of water. Its biocompatibility makes it useful in the development of medical devices and implants.

Pictogrammes

Flame
GHS02

Mention d'avertissement

Danger

Mentions de danger

H228

Classification des risques

Flam. Sol. 1

Code de la classe de stockage

4.1B - Flammable solid hazardous materials

Classe de danger pour l'eau (WGK)

nwg

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Certificats d'analyse (COA)

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Tantalum-based semiconductors for solar water splitting
Zhang P, et al.
Chemical Society Reviews, 43(13), 4395-4422 (2014)
Additively manufactured porous tantalum implants
Wauthle R, et al.
Acta Biomaterialia, 14(13), 217-225 (2015)
S Nag et al.
Journal of the mechanical behavior of biomedical materials, 16, 21-28 (2012-11-10)
Microstructure and mechanical properties of laser deposited complex quaternary Ti-34Nb-7Zr-7Ta (all wt%), an orthopedic load-bearing implant alloy, has been investigated in detail in both as-deposited as well as heat-treated (β-solutionized and quenched) conditions. The difference in stress-strain behavior of this
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Vascular, 21(2), 87-91 (2013-03-20)
Control of back bleeding from the hypogastric artery into the aneurysm after endovascular aneurysm repair (EVAR) of a ruptured aorto-iliac aneurysm may be necessary in order to avoid a type II endoleak. It is an emergency situation and selective catheterization
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Nanoscale, 5(4), 1494-1498 (2013-01-23)
Ta oxide nanotubes (NTs) were formed by the anodization of Ta at 15 V in a solution of concentrated sulfuric acid containing 0.8-1.0 M hydrofluoric acid. To study the initial stages of NT formation, FESEM images of samples anodized for
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