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Key Documents

900734

Sigma-Aldrich

PbS core-type quantum dots

fluorescence λem 1000 nm, 10 mg/mL in toluene

Synonym(s):

Fluorescent nanocrystals, Lead sulfide, PbS QDs

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About This Item

Linear Formula:
PbS
CAS Number:
1314-87-0
UNSPSC Code:
12352302
NACRES:
NA.23

form

liquid

Quality Level

100

concentration

10 mg/mL in toluene

fluorescence

λem 1000 nm

storage temp.

2-8°C

InChI

1S/Pb.H2S/h;1H2

InChI key

MIXDRAMRMDOQJH-UHFFFAOYSA-N

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Application

The size for our lead sulfide (PbS) quantum dots (QDs) varies between 2.5 to 8 nm and depending upon this, these QDs emit between 900-1600 nm. Our PbS QDs possess high quantum yield, sharp emission and exhibit narrow fluorescence band (full width at half maximum <100 nm), which make them suitable as light absorber or IR emitter in applications in solar cells, photodetectors and infrared light emitting diodes (LEDs).

Signal Word

Danger

Hazard Classifications

Aquatic Chronic 2 - Asp. Tox. 1 - Flam. Liq. 2 - Repr. 1A - Skin Irrit. 2 - STOT RE 2 - STOT RE 2 Inhalation - STOT SE 3

Target Organs

Central nervous system

Storage Class Code

3 - Flammable liquids

WGK

WGK 3

Flash Point(F)

46.4 °F - closed cup

Flash Point(C)

8 °C - closed cup

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Certificates of Analysis (COA)

Lot/Batch Number
MKCV8049
MKCS6343
MKCQ4465
MKCL4746
MKCH6130

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Highly efficient quantum dot near-infrared light-emitting diodes.
Gong X, et al.
Nature Photonics, 10, 253-257 (2016)
Xinzheng Lan et al.
Advanced materials (Deerfield Beach, Fla.), 28(2), 299-304 (2015-11-19)
A solution-based passivation scheme is developed featuring the use of molecular iodine and PbS colloidal quantum dots (CQDs). The improved passivation translates into a longer carrier diffusion length in the solid film. This allows thicker solar-cell devices to be built
Gerasimos Konstantatos et al.
Nature nanotechnology, 5(6), 391-400 (2010-05-18)
The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution

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