394505
Xenon difluoride
99.99% trace metals basis
Synonym(s):
Xenon Fluoride (XeF2)
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About This Item
Recommended Products
vapor pressure
3.8 mmHg ( 25 °C)
Quality Level
Assay
99.99% trace metals basis
form
crystals
mp
129 °C (lit.)
density
4.32 g/mL at 25 °C (lit.)
SMILES string
F[Xe]F
InChI
1S/F2Xe/c1-3-2
InChI key
IGELFKKMDLGCJO-UHFFFAOYSA-N
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General description
Xenon fluoride may be obtained by interacting elemental xenon and fluorine in the temperature range of 473-523 oC and 5 absolute atmosphere. Xenon difluoride readily interacts with Lewis acid and forms complexes.
Application
Very useful fluorination agent. Xenon fluoride may be used as a fluorinating agent to analyze sulphur, selenium and tellurium by gas chromatography.
Packaging
Packaged in PFA/FEP bottles
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 1 Inhalation - Acute Tox. 3 Oral - Eye Dam. 1 - Ox. Sol. 2 - Skin Corr. 1B
Storage Class Code
5.1B - Oxidizing hazardous materials
WGK
WGK 3
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Fluorination with XeF(2).(1) 44. Effect of Geometry and Heteroatom on the Regioselectivity of Fluorine Introduction into an Aromatic Ring.
The Journal of organic chemistry, 63(3), 878-880 (2001-10-24)
Use of Xenon difluoride for the determination of sulfur, selenium and tellurium as the volatile fluorides by gas chromatography
Russian Chemical Bulletin, 22(11), 2552-2554 (1973)
Infrared spectra of complex compounds of xenon difluoride with ruthenium pentafluoride
Journal of Applied Spectroscopy, 17(1), 920-922 (1972)
Inorganic chemistry, 49(19), 8997-9004 (2010-08-31)
The existence of the trifluoroxenate(II) anion, XeF(3)(-), had been postulated in a prior NMR study of the exchange between fluoride ion and XeF(2) in CH(3)CN solution. The enthalpy of activation for this exchange, ΔH(⧧), has now been determined by use
Journal of synchrotron radiation, 17(1), 69-74 (2009-12-24)
The synchrotron radiation (SR) stimulated etching of silicon elastomer polydimethylsiloxane (PDMS) using XeF(2) as an etching gas has been demonstrated. An etching system with differential pumps and two parabolic focusing mirrors was constructed to perform the etching. The PDMS was
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