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263230

Sigma-Aldrich

Germanium

chips, 99.999% trace metals basis

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About This Item

Empirical Formula (Hill Notation):
Ge
CAS Number:
7440-56-4
Molecular Weight:
72.64
EC Number:
231-164-3
MDL number:
MFCD00085310
UNSPSC Code:
12141716
PubChem Substance ID:
24855958
NACRES:
NA.23

Assay

99.999% trace metals basis

form

chips

resistivity

53 Ω-cm, 20°C

bp

2830 °C (lit.)

mp

937 °C (lit.)

density

5.35 g/mL at 25 °C (lit.)

SMILES string

[Ge]

InChI

1S/Ge

InChI key

GNPVGFCGXDBREM-UHFFFAOYSA-N

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Storage Class Code

13 - Non Combustible Solids

WGK

WGK 3

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Minxian Wu et al.
Physical chemistry chemical physics : PCCP, 15(14), 4955-4964 (2013-02-27)
The electrodeposition of germanium from the ionic liquid 1-butyl-1-methylpyrrolidinium dicyanamide ([BMP][DCA]) and a mixture of [BMP][DCA] and 1-butyl-1-methylpyrrolidinium chloride ([BMP]Cl) was studied using cyclic voltammetry and using an electrochemical quartz crystal microbalance (EQCM). [GeCl4(BuIm)2] (BuIm = N-butylimidazole) was used as
Miroslav Cerný et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(3), 035401-035401 (2012-12-15)
The response of three covalent crystals with a diamond lattice (C, Si and Ge) to uniaxial and a special triaxial (generally nonhydrostatic) loading is calculated from first principles. The lattice deformations are described in terms of variations of bond lengths
Jian-Qiang Shen et al.
Dalton transactions (Cambridge, England : 2003), 42(16), 5812-5817 (2013-03-05)
An unprecedented organic-inorganic hybrid germanoniobate compound Na4[Cu(en)2(H2O)2]5[Na6Ge8Nb32O108H8(OH)4]·41H2O (1) was synthesized under the hydrothermal condition. In compound 1, the {Nb16} cage containing four {GeO4} tetrahedra in its internal cavity results in a heteropolyniobate anion [H4Ge4Nb16O54(OH)2](10-) ({Ge4Nb16}), which is connected by a
Fabian von Rohr et al.
Journal of physics. Condensed matter : an Institute of Physics journal, 25(7), 075804-075804 (2013-01-25)
The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi(4)Te(7), GeSb(4)Te(7) and Ge(Bi(1-x)Sb(x))(4)Te(7) solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved
Michael Oehme et al.
Optics express, 21(2), 2206-2211 (2013-02-08)
In this paper we investigate the influence of n-type doping in Ge light emitting diodes on Si substrates on the room temperature emission spectrum. The layer structures are grown with a special low temperature molecular beam epitaxy process resulting in
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