Tin(IV) oxide (SnO2) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.
Application
Tin(IV) oxide has been used to prepare thin films of TiO2-doped SnO2 oxide nanocomposites.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
Advanced materials (Deerfield Beach, Fla.), 25(7), 1042-1047 (2012-11-20)
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages
One-dimensional (1-D) SnO(2) nanorods (NRs) with a rutile structure are grown on various substrates regardless of the lattice-mismatch by using a new nutrient solution based on tin oxalate, which generated supersaturated Sn(2+) sources. These affluent sources are appropriate for producing
Here we demonstrate a facile method of quantifying the decaying optical field surrounding free-standing tin dioxide (SnO(2)) nanofiber waveguides. Through the use of thin self-assembled polyelectrolyte coatings and fluorescent optical transmitters we map out the optical intensity as a function
Porous SnO₂/graphene composite thin films are prepared as anodes for lithium ion batteries by the electrostatic spray deposition technique. Reticular-structured SnO₂ is formed on both the nickel foam substrate and the surface of graphene sheets according to the scanning electron
Novel eggroll-like CaSnO(3) nanotubes have been prepared by a single spinneret electrospinning method followed by calcination in air for the first time. The electrospun sample as a lithium-ion battery electrode material exhibited improved cycling stability and rate capability by virtue
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