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Sigma-Aldrich

Dichlorosilane

≥99.99% trace metals basis

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About This Item

Linear Formula:
Cl2SiH2
CAS Number:
4109-96-0
Molecular Weight:
101.01
EC Number:
223-888-3
MDL number:
MFCD00011600
UNSPSC Code:
12352300
PubChem Substance ID:
24860129

vapor density

3.5 (vs air)

vapor pressure

1254 mmHg ( 20 °C)

description

film resistivity > 50 Ω-cm

Assay

≥99.99% trace metals basis

autoignition temp.

136 °F

expl. lim.

99 %

bp

8.3 °C (lit.)

mp

−122 °C (lit.)

SMILES string

Cl[SiH2]Cl

InChI

1S/Cl2H2Si/c1-3-2/h3H2

InChI key

MROCJMGDEKINLD-UHFFFAOYSA-N

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General description

Dichlorosilane (DCS) is a halogenated silicon based precursor that facilitates the growth of a variety of silane based films such as silicon oxide, silicon nitride, silicon carbide, and epitaxial growth of silica.

Application

DCS is widely used in the synthesis of a variety of silicon-based materials, which find applications in the development of organic electronics based devices, including OFETs, MEMS, NEMS, MOSFETS, and lithium-ion batteries.

Signal Word

Danger

Hazard Statements

H220,H280,H314,H330

Hazard Classifications

Acute Tox. 2 Inhalation - Eye Dam. 1 - Flam. Gas 1 - Press. Gas Liquefied gas - Skin Corr. 1B

Supplementary Hazards

EUH014,EUH071

Storage Class Code

2A - Gases

WGK

WGK 1

Flash Point(F)

-34.6 °F

Flash Point(C)

-37 °C

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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The feasibility of polymeric phases based on a silicone polymer backbone as pseudostationary phases for electrokinetic chromatography has been investigated. Silicone phases were studied because of the range of chemistries that could be developed based on these backbones, and because
Low pressure chemical vapor deposition of silicon carbide from dichlorosilane and acetylene.
Wang C and Tsai D
Materials Chemistry and Physics, 63(3), 196-201 (2000)
Dichlorosilane-derived nano-silicon inside hollow carbon spheres as a high-performance anode for Li-ion batteries.
Jaumann T, et al.
Journal of Material Chemistry C, 5(19), 9262-9271 (2017)
Stress control of polycrystalline 3C−SiC films in a large-scale LPCVD reactor using 1, 3-disilabutane and dichlorosilane as precursors.
Roper CS, et al.
Journal of Micromechanics and Microengineering, 16(12), 2736-2736 (2006)
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