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669008

Sigma-Aldrich

Tetrakis(dimethylamido)titanium(IV)

packaged for use in deposition systems

Synonym(s):

TDMAT, Tetrakis(dimethylamino)titanium(IV)

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About This Item

Linear Formula:
[(CH3)2N]4Ti
CAS Number:
3275-24-9
Molecular Weight:
224.17
EC Number:
221-904-3
MDL number:
MFCD00014861
UNSPSC Code:
12352103
PubChem Substance ID:
24885015
NACRES:
NA.23

Quality Level

100

Assay

99.999% (trace metals analysis)

form

liquid

reaction suitability

core: titanium

bp

50 °C/0.5 mmHg (lit.)

density

0.947 g/mL at 25 °C (lit.)

SMILES string

CN(C)[Ti](N(C)C)(N(C)C)N(C)C

InChI

1S/4C2H6N.Ti/c4*1-3-2;/h4*1-2H3;/q4*-1;+4

InChI key

MNWRORMXBIWXCI-UHFFFAOYSA-N

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General description

Atomic number of base material: 22 Titanium

Application

Precursors Packaged for Depositions Systems
The product is a precursor for the deposition of titanium dioxide thin films by atomic layer deposition with water. Tetrakis(dimethylamido)titanium(IV) (TDMAT) undergoes exothermal reaction with excess cyclopentadiene to yield tris(dimethylamido)(η5-cyclopentadienyl)titanium(IV).

Pictograms

FlameCorrosion
GHS02,GHS05

Signal Word

Danger

Hazard Statements

H225,H260,H314

Hazard Classifications

Flam. Liq. 2 - Skin Corr. 1B - Water-react 1

Supplementary Hazards

EUH014

Storage Class Code

4.3 - Hazardous materials which set free flammable gases upon contact with water

WGK

WGK 3

Flash Point(F)

-22.0 °F - closed cup

Flash Point(C)

-30 °C - closed cup

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Certificates of Analysis (COA)

Lot/Batch Number
SHBP1947
SHBL6315
80197MMV
80196MMV
10218DJV

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Journal of Applied Physics, 102, 083521/1-083521/1 (2007)
Mikami K, et al. et al.
Science of Synthesis: Houben-Weyl Methods of Molecular Transformations, 2, 494-494 (2014)
Matthew T McDowell et al.
ACS applied materials & interfaces, 7(28), 15189-15199 (2015-06-18)
Light absorbers with moderate band gaps (1-2 eV) are required for high-efficiency solar fuels devices, but most semiconducting photoanodes undergo photocorrosion or passivation in aqueous solution. Amorphous TiO2 deposited by atomic-layer deposition (ALD) onto various n-type semiconductors (Si, GaAs, GaP

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