264032
Indium
powder, −100 mesh, 99.99% trace metals basis
Synonym(s):
Indium element
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About This Item
Empirical Formula (Hill Notation):
In
CAS Number:
Molecular Weight:
114.82
EC Number:
MDL number:
UNSPSC Code:
12141719
PubChem Substance ID:
NACRES:
NA.23
Recommended Products
vapor pressure
<0.01 mmHg ( 25 °C)
Quality Level
Assay
99.99% trace metals basis
form
powder
resistivity
8.37 μΩ-cm
particle size
−100 mesh
mp
156.6 °C (lit.)
density
7.3 g/mL at 25 °C (lit.)
SMILES string
[In]
InChI
1S/In
InChI key
APFVFJFRJDLVQX-UHFFFAOYSA-N
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General description
Indium,a rare and stable element, exhibits exceptional properties such as high thermaland electrical conductivity. It finds application in diverse alloys, batteryproduction, and the synthesis of indium tin oxide, essential for transparentelectrodes in LCDs and touchscreens. Additionally, Indium is utilized in theproduction of solar cells, LEDs, and other optoelectronic devices.
Application
- Indium-containing semiconductors: Discusses the role of indium in semiconductor technology, relevant for both academia and material science, focusing on its application in indium-tin oxide and other indium compounds (Schwarz‐Schampera, 2014).
- Recovery of indium from liquid crystal displays: This article presents methods for the recovery of indium from waste electronics, an area of significant interest for sustainable chemistry and materials science (Rocchetti et al., 2016).
- The oxidation and surface speciation of indium and indium oxides exposed to atmospheric oxidants: Explores the chemical properties and reactions of indium in various oxidation states, relevant to environmental and materials chemistry (Detweiler et al., 2016).
Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Acute Tox. 4 Inhalation - Eye Irrit. 2 - Flam. Sol. 1 - Skin Irrit. 2 - STOT SE 3
Target Organs
Respiratory system
Storage Class Code
4.1B - Flammable solid hazardous materials
WGK
WGK 3
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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Journal of nanoscience and nanotechnology, 13(1), 498-503 (2013-05-08)
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructures by oxidizing the InN NRs at higher temperatures. XRD
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This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. Electron-rich biaryl substrates undergo hydroarylation more effectively, and the substrates with various types of substituents on the alkyne
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Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se2 (CIGS) nanocrystals sintered at a high temperature (>500 °C) under Se vapor. The device performance varied significantly with [Ga]/[In+Ga] content in the nanocrystals. The highest power conversion efficiency (PCE) observed
Articles
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