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215066

Sigma-Aldrich

Gallium(III) oxide

≥99.99% trace metals basis

Synonym(s):

Gallium trioxide

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About This Item

Empirical Formula (Hill Notation):
Ga2O3
CAS Number:
Molecular Weight:
187.44
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23

Quality Level

Assay

≥99.99% trace metals basis

form

(crystalline powder)

reaction suitability

reagent type: catalyst
core: gallium

density

5.88 g/mL at 25 °C

SMILES string

O=[Ga]O[Ga]=O

InChI

1S/2Ga.3O

InChI key

QZQVBEXLDFYHSR-UHFFFAOYSA-N

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General description

Gallium(III) oxide (Ga2O3) is a wide band gap semiconductor that belongs to a family of transparent semiconducting oxides (TSO). It can form different polymorphs such as α-,β-, γ-, δ-, and ε-. Polycrystalline and nanocrystalline Ga2O3 can be prepared using several methods such as chemical vapor deposition, thermal vaporization, and sublimation, molecular beam epitaxy, melt growth, etc. It is widely used as a functional material in various applications including optoelectronics, chemical sensors, catalysis, semiconductor devices, field-effect transistors, and many others.

Application

Ga2O3 is widely used as a host material for the fabrication of electroluminescent devices. For example, europium-doped Ga2O3 thin films can be used as a light-emitting layer to fabricate an optically transparent electroluminescent device.

Due to its distinct optical and electrical properties like moderate conductivity and high laser damage threshold, Ga2O3 can be used in laser-driven electron accelerators, low-loss plasmonics, and Si-based dielectric laser accelerators.

It can also be used as an effective catalyst for the dehydrogenation of propane to propene.
Starting material for the preparation of Sr2CuGaO3S, an example of a rare square pyramidal gallium.

Storage Class Code

11 - Combustible Solids

WGK

WGK 2

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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G Wilma Busser et al.
ChemSusChem, 5(11), 2200-2206 (2012-10-24)
The deposition of hydrogen evolution sites on photocatalysts is a crucial step in the multistep process of synthesizing a catalyst that is active for overall photocatalytic water splitting. An alternative approach to conventional photodeposition was developed, applying the photocatalytic reforming
The rate of charge tunneling through self-assembled monolayers is insensitive to many functional group substitutions.
Hyo Jae Yoon et al.
Angewandte Chemie (International ed. in English), 51(19), 4658-4661 (2012-04-17)
Farheen N Sayed et al.
Journal of nanoscience and nanotechnology, 11(4), 3363-3369 (2011-07-23)
We report on the structural and magnetic properties of nanoparticles of NiGa2O4 and 5 at.% M doped (M = Mn2+, Cu2+, Co2+, Fe3+ and Tb3+) at Ga site of NiGa2O4, synthesized by gel-combustion method. The particle size, as investigated by
Yi-Jen Wu et al.
ACS nano, 4(3), 1393-1398 (2010-02-13)
Light-scattering properties of individual gold-in-Ga(2)O(3) peapod nanowires and gold-in-Ga(2)O(3) core/shell nanowires were investigated by optical dark-field microscopy. The observed scattering peaks are suggested to result from plasmonic resonance of the gold nanopeas and nanorods in the Ga(2)O(3) nanowires. As the
Vladimir N Sigaev et al.
Nanoscale, 5(1), 299-306 (2012-11-21)
Nanoparticles in amorphous oxides are a powerful tool for embedding a wide range of functions in optical glasses, which are still the best solutions in several applications in the ever growing field of photonics. However, the control of the nanoparticle

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