636703
Silicon nitride
nanopowder, <50 nm particle size (spherical), ≥98.5% trace metals basis
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About This Item
Productos recomendados
Quality Level
assay
≥98.5% trace metals basis
form
nanopowder
surface area
103-123 m2/g
particle size
<50 nm (spherical)
density
3.44 g/mL at 25 °C (lit.)
bulk density
0.046 g/mL
SMILES string
N12[Si]34N5[Si]16N3[Si]25N46
InChI
1S/N4Si3/c1-5-2-6(1)3(5)7(1,2)4(5)6
InChI key
HQVNEWCFYHHQES-UHFFFAOYSA-N
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Storage Class
11 - Combustible Solids
wgk_germany
nwg
flash_point_f
Not applicable
flash_point_c
Not applicable
ppe
dust mask type N95 (US), Eyeshields, Gloves
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We report time domain observations of optical instability in high Q silicon nitride whispering gallery disk resonators. At low laser power the transmitted optical power through the disk looks chaotic. At higher power, the optical output settles into a stable
Journal of nanoscience and nanotechnology, 12(11), 8775-8778 (2013-02-21)
The dispersion properties of single- and multi-walled carbon nanotubes as well as mechanically exfoliated few layer graphene flakes within the silicon nitride ceramic matrix have been investigated. Small angle neutron scattering experiments have been employed to gain information on the
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In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane
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Integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for on-chip WDM systems. A number of device geometries have already been demonstrated that fulfill these criteria, at least in part, but combining all of
Journal of the mechanical behavior of biomedical materials, 16, 9-20 (2012-11-10)
Behaviors of silicon nitride films and their relation to blood compatibility and biomechanical have been interesting subjects to researchers. A systematic blood compatibility and biomechanical property investigation on the deposition of silicon-nitride films under varying N₂ and CF₄ flows was
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