455199
Tetrakis(dimethylamido)hafnium(IV)
≥99.99%
Synonym(s):
TDMAH, Tetrakis(dimethylamino)hafnium(IV)
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About This Item
Linear Formula:
[(CH3)2N]4Hf
CAS Number:
Molecular Weight:
354.79
MDL number:
UNSPSC Code:
12352103
PubChem Substance ID:
NACRES:
NA.23
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Quality Level
Assay
≥99.99%
form
low-melting solid
reaction suitability
core: hafnium
mp
26-29 °C (lit.)
density
1.098 g/mL at 25 °C
SMILES string
CN(C)[Hf](N(C)C)(N(C)C)N(C)C
InChI
1S/4C2H6N.Hf/c4*1-3-2;/h4*1-2H3;/q4*-1;+4
InChI key
ZYLGGWPMIDHSEZ-UHFFFAOYSA-N
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General description
Tetrakis(dimethylamido)hafnium(IV) is an organometallic compound consisting of a central hafnium atom (Hf) surrounded by four dimethylamido ligands (NMe2). It is commonly used as a CVD/ALD precursor to produce high-quality Hf thin films. It is a solid with low melting point.
Application
Tetrakis(dimethylamido)hafnium(IV) can be used:
- As an atomic layer deposition(ALD) precursor for deposition of hafnium oxide thin films for advanced semiconductor devices.[1]
- As a precursor to fabricate polymer-derived ceramic nanocomposites.[2]
- To prepare HfO2, CeO2, and Ce-doped HfO2 thin films on Ge substrates by using tris(isopropyl-cyclopentadienyl)cerium [Ce(iPrCp)3] precursors with H2O via ALD method.[3]
- To produce Hf3N4 thin films with TDMAH and ammonia at low substrate temperatures at 150−250 °C.[4]
Analysis Note
Purity excludes ~2000 ppm Zr.
accessory
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Description
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Signal Word
Danger
Hazard Statements
Precautionary Statements
Hazard Classifications
Flam. Sol. 1 - Skin Corr. 1B - Water-react 2
Supplementary Hazards
Storage Class Code
4.3 - Hazardous materials which set free flammable gases upon contact with water
WGK
WGK 3
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
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J. Eur. Ceram. Soc., 35, 2007-2015 (2015)
Atomic layer deposition of CeO2/HfO2 gate dielectrics on Ge substrate
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Applied Surface Science, 321, 214-218 (2014)
Electrical characterization of atomic-layer-deposited hafnium oxide films from hafnium tetrakis (dimethylamide) and water/ozone: Effects of growth temperature, oxygen source, and postdeposition annealing
Hector Garcia, et al.
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, And Films, 31 (2013)
Tetrakis(dimethylamido)hafnium Adsorption and Reaction on Hydrogen Terminated Si(100) Surfaces
Kejing Li, et al.
The Journal of Physical Chemistry C, 114, 14061-14075 (2010)
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