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95410

Sigma-Aldrich

Tungsten(VI) oxide

powder, puriss., 99.9%

Synonym(s):

Tungstic anhydride

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About This Item

Linear Formula:
WO3
CAS Number:
Molecular Weight:
231.84
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23

grade

puriss.

Quality Level

Assay

99.9%

form

powder

density

7.16 g/mL at 25 °C (lit.)

SMILES string

O=[W](=O)=O

InChI

1S/3O.W

InChI key

ZNOKGRXACCSDPY-UHFFFAOYSA-N

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General description

Tungsten(VI) oxide (WO3) is a semiconducting material with excellent electrochromic properties. It is a cost efficient material with a high optical modulation. It can be synthesized by a variety of methods which include chemical vapor deposition, electrodeposition, and other sol-gel based coating processes.

Application

WO3 can be used for a wide range of applications such as electrochemical devices, photocatalysis, biological sensors, and other display devices.

Caution

may contain dark blue particles.

Storage Class Code

13 - Non Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

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Inkjet printing of sol-gel derived tungsten oxide inks
Vidmar T, et al.
Solar Energy Materials and Solar Cells, 125, 87-95 (2014)
Electrochemical reduction of tungsten compounds to produce tungsten powder
Erdogan M and Karakaya I
Metall. Mater. Trans. B (2010)
Sidra Farid et al.
Nanotechnology, 31(9), 095706-095706 (2019-11-12)
We report a detailed analysis on the effects of processing parameters for sputtered tungsten trioxide (WO3) thin nanoscale films on their structural, vibrational and electrical properties. The research aims to understand the fundamental aspects of WO3 sputtering at relatively low
Building of peculiar heterostructure of Ag/two-dimensional fullerene shell-WO3-x for enhanced photoelectrochemical performance
Ren Y, et al.
Applied Catalysis. B, Environmental, 231, 381-390 (2018)
Wenshuo Xu et al.
Small (Weinheim an der Bergstrasse, Germany), 16(3), e1905985-e1905985 (2019-12-20)
2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered

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