266779
Hafnium
wire, diam. 1.0 mm, ≥99.9% trace metals basis (purity excludes ~2% zirconium)
Sinonimo/i:
Celtium, Hafnium element
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About This Item
Formula empirica (notazione di Hill):
Hf
Numero CAS:
Peso molecolare:
178.49
Numero CE:
Numero MDL:
Codice UNSPSC:
12352300
ID PubChem:
Livello qualitativo
Saggio
≥99.9% trace metals basis (purity excludes ~2% zirconium)
Stato
wire
Resistività
29.6 μΩ-cm, 0°C
Diametro
1.0 mm
P. ebollizione
4602 °C (lit.)
Punto di fusione
2227 °C (lit.)
Densità
13.3 g/cm3 (lit.)
Stringa SMILE
[Hf]
InChI
1S/Hf
VBJZVLUMGGDVMO-UHFFFAOYSA-N
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Quantità
2 g = 20 cm
Codice della classe di stoccaggio
13 - Non Combustible Solids
Classe di pericolosità dell'acqua (WGK)
WGK 1
Punto d’infiammabilità (°F)
Not applicable
Punto d’infiammabilità (°C)
Not applicable
Dispositivi di protezione individuale
Eyeshields, Gloves, type N95 (US)
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Chemical communications (Cambridge, England), 48(86), 10630-10632 (2012-09-27)
Novel Yb/Er(Tm):Na(3)MF(7) (M = Zr, Hf) nanocrystals with intrinsic single-band upconversion emission, in contrast to the routine lanthanide-doped fluoride nanocrystals which show typical multi-band upconversion emissions, are reported for the first time. Specifically, the red upconversion intensity of the Yb/Er:Na(3)ZrF(7)
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Gerald Lucovsky et al.
Journal of nanoscience and nanotechnology, 12(6), 4811-4819 (2012-08-22)
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Xuelu Ma et al.
Physical chemistry chemical physics : PCCP, 15(3), 901-910 (2012-12-04)
In this paper, the reaction mechanisms of CO assisted N(2) cleavage and functionalization activated by a dinuclear hafnium complex are studied using a density function theory (DFT) method. Several key intermediates (Ia, Ib, Ic and Id) with axial/equatorial N=C=O coordination
Hyun-June Jung et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3396-3400 (2012-05-26)
Bismuth nanocrystals for a nanoscale floating gate memory device are self-assembled in Bi(2) Mg(2/3) Nb(4/3) O(7) (BMN) dielectric films grown at room temperature by radio-frequency sputtering. The TEM cross-sectional image shows the "real" structure grown on a Si (001) substrate.
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