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30101

Sigma-Aldrich

Ammonium fluoride

puriss. p.a., ACS reagent, ≥98%

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About This Item

Linear Formula:
NH4F
CAS Number:
12125-01-8
Molecular Weight:
37.04
EC Number:
235-185-9
MDL number:
MFCD00011423
UNSPSC Code:
12352302
eCl@ss:
38050106
PubChem Substance ID:
329753432

grade

ACS reagent
puriss. p.a.

Assay

≥98%

form

solid

impurities

≤0.1% hexafluorosilicate (as SiF6)
≤1% ammonium hydrogen difluoride (NH4HF2)

ign. residue

≤0.005% (as SO4)

anion traces

chloride (Cl-): ≤5 mg/kg
sulfate (SO42-): ≤50 mg/kg

cation traces

Cd: ≤5 mg/kg
Cu: ≤5 mg/kg
Fe: ≤5 mg/kg
K: ≤20 mg/kg
Na: ≤20 mg/kg
Pb: ≤5 mg/kg
Zn: ≤5 mg/kg

SMILES string

N.F

InChI

1S/FH.H3N/h1H;1H3

InChI key

LDDQLRUQCUTJBB-UHFFFAOYSA-N

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Pictograms

Skull and crossbones
GHS06

Signal Word

Danger

Hazard Statements

H301 + H311 + H331

Hazard Classifications

Acute Tox. 3 Dermal - Acute Tox. 3 Inhalation - Acute Tox. 3 Oral

Storage Class Code

6.1D - Non-combustible acute toxic Cat.3 / toxic hazardous materials or hazardous materials causing chronic effects

WGK

WGK 1

Flash Point(F)

does not flash

Flash Point(C)

does not flash

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Etching processing of Si (111) and Si (100) surfaces in an ammonium fluoride solution investigated by in situ ATR-IR.
Nakamura M, et al.
Electrochimica Acta, 41(5), 681-686 (1996)
Jae Hoon Bong et al.
Nanoscale, 6(15), 8503-8508 (2014-06-21)
We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We
On the Etching of Silicon by Oxidants in Ammonium Fluoride Solutions A Mechanistic Study.
Gerischer H and Lubke M.
Journal of the Electrochemical Society, 135(11), 2782-2786 (1988)
Surface analysis of the electropolishing layer on Si (111) in ammonium fluoride solution.
Lewerenz HJ, et al.
Electrochimica Acta, 45(28), 4615-4627 (2000)
Yuntao Li et al.
Journal of hazardous materials, 172(2-3), 635-640 (2009-08-12)
A F-doped vanadia/titania catalyst has been developed by partly substituting the lattice oxygen of the catalyst with fluorine, using NH(4)F as a precursor. The aim of this novel design was to promote the activity of a catalyst with low vanadia
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