268488
Niobium
foil, thickness 0.025 mm, 99.8% trace metals basis
Synonym(s):
Columbium
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About This Item
Assay
99.8% trace metals basis
form
foil
resistivity
13-16 μΩ-cm, 20°C
thickness
0.025 mm
bp
4742 °C (lit.)
mp
2468 °C (lit.)
density
8.57 g/mL at 25 °C (lit.)
SMILES string
[Nb]
InChI
1S/Nb
InChI key
GUCVJGMIXFAOAE-UHFFFAOYSA-N
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Quantity
4.8 g = 150 × 150 mm
Storage Class Code
13 - Non Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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Journal of the American Chemical Society, 135(5), 1719-1722 (2013-01-23)
2H-NbSe(2) is a canonical Charge-Density-Wave (CDW) layered material the structural details of which remained elusive. We report the detailed structure of 2H-NbSe(2) below the CDW transition using a (3 + 2)-dimensional crystallographic approach on single crystal X-ray diffraction data collected
Optics express, 21(4), 4475-4480 (2013-03-14)
We propose and fabricate a LiNbO₃-based nonlinear photonic crystal with locally ordered ferroelectric domains. The nonlinearity modulation provides sets of uniformly distributed reciprocal lattice vectors, ensuring broadband high frequency conversion efficiency. Frequency tripling via cascading is demonstrated in the range
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085701-085701 (2013-01-31)
We report results of measurements of the ac conductivity of a Nb superconducting thin film in a swept dc magnetic field. In the mixed state the swept dc field creates vortices at the film surface which pass through the film
Journal of physics. Condensed matter : an Institute of Physics journal, 25(8), 085501-085501 (2013-01-25)
A systematic study of electronic structure and band gap states is conducted to analyze the monodoping and charge compensated codoping of rutile TiO(2) with Rh and Nb, using the DFT + U approach. Doping of rutile TiO(2) with Rh atoms induces hybridized
Optics express, 20(25), 27562-27568 (2012-12-25)
We demonstrate error-free 80km transmission by a silicon carrier-depletion Mach-Zehnder modulator at 10Gbps and the power penalty is as low as 1.15dB. The devices were evaluated through the bit-error-rate characterizations under the system-level analysis. The silicon Mach-Zehnder modulator was also
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