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303518

Sigma-Aldrich

Tantalum(V) oxide

99% trace metals basis

Synonym(s):

Tantalum pentoxide

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About This Item

Linear Formula:
Ta2O5
CAS Number:
1314-61-0
Molecular Weight:
441.89
EC Number:
215-238-2
MDL number:
MFCD00011254
UNSPSC Code:
12352303
PubChem Substance ID:
24858127
NACRES:
NA.23

Quality Level

100

Assay

99% trace metals basis

form

powder

reaction suitability

reagent type: catalyst
core: tantalum

density

8.2 g/mL at 25 °C (lit.)

application(s)

battery manufacturing

SMILES string

O=[Ta](=O)O[Ta](=O)=O

InChI

1S/5O.2Ta

InChI key

PBCFLUZVCVVTBY-UHFFFAOYSA-N

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General description

Tantalum pentoxide is dielectric in nature making it useful for making capacitors in the electronics industry.

Application

Tantalum oxide is intermixed with silicon in gate dielectric structures. It may be used to synthesize hexagonally packed mesoporous tantalum oxide molecular sieves.Ion-beam sputter deposition of tantalum oxide films was investigated for possible optical coating applications.It may be used in making optical glass for lenses and in electronic circuits.

Storage Class Code

11 - Combustible Solids

WGK

nwg

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable

Personal Protective Equipment

dust mask type N95 (US), Eyeshields, Gloves

Certificates of Analysis (COA)

Search for Certificates of Analysis (COA) by entering the products Lot/Batch Number. Lot and Batch Numbers can be found on a product’s label following the words ‘Lot’ or ‘Batch’.

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Effects of oxygen content on the optical properties of tantalum oxide films deposited by ion-beam sputtering.
H Demiryont et al.
Applied optics, 24(4), 490-490 (1985-02-15)
Synthesis and characterization of hexagonally packed mesoporous tantalum oxide molecular sieves.
Antonelli DM and Ying JY
Chemistry of Materials, 8(4), 874-881 (1996)
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures.
Alers GB, et al.
Applied Physics Letters, 73(11), 1517-1519 (1998)

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