Principaux documents

Voir toute la documentation

Passer à

GRFETS10

Graphene FET chip

Name: Graphene FET chip
Brand: ALDRICH

S10

Synonyme(s) :

Graphene FET, Graphene FET sensor, Graphene FET with 30 Hall-bar devices and 6 2-probe configurations with varied channel geometry

Se connecter pour consulter les tarifs organisationnels et contractuels.

Sélectionner une taille de conditionnement

Changer de vue

Taille/Référence	Disponibilité	Prix

A propos de cet article

NACRES:

NA.23

UNSPSC Code:

43211915

Le tarif et la disponibilité ne sont pas disponibles actuellement.

Service technique

Besoin d'aide ? Notre équipe de scientifiques expérimentés est là pour vous.

Laissez-nous vous aider

Propriétés

description

Dirac point:< 50 V , Gate Oxide material: SiO₂, Gate Oxide thickness: 90 nm, Graphene field-effect mobility: >1000 cm²/V·s, Maximum gate-source voltage: ± 50 V
Maximum temperature rating: 150 °C
Maximum drain-source current density: 107 A/cm², Metallization: Chromium 2 nm/Gold 50 nm, Monolayer CVD grown Graphene based field effect transistors (FET) S10, Residual charge carrier density: <2 x 10¹² cm^-2, Resistivity of substrate: 1-10 Ω·cm, Yield >75%

Description

General description

Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm². The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.

Device configuration:

This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.
The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.

Application

Graphene device research
FET based sensor research for active materials deposited on graphene
Chemical sensors
Biosensors
Bioelectronics
Magnetic sensors
Photodetectors

GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.

Features and Benefits

Device Features:

State-of-art graphene FETs utilizing consistent high-quality CVD grown monolayer graphene
Devices are not encapsulated and can be functionalized by additives
Perfect platform for sensor research and development
36 individual graphene FETs per chip
Mobilities typically > 1000 cm2/V·s

Disclaimer

Basic handling instructions:The monolayer CVD graphene used in this FET device is highly prone to damage by external factors.
To maintain the quality of the devices, we recommend taking the following precautions:

Be careful when handling the graphene FET chip.
Tweezers should not contact the device area directly.

Comparer avec des articles similaires

Voir la comparaison complète

Montrer les différences

1 of 1

Cet article	GRFETS20	GRTRANSFER10	799009
Sigma-Aldrich GRFETS10 Graphene FET chip	Sigma-Aldrich GRFETS20 Graphene FET chip	Sigma-Aldrich GRTRANSFER10 Easy transfer monolayer Graphene	Sigma-Aldrich 799009 Monolayer graphene film
description S10	description S20	description L × W 1 cm × 1 cm, avg. no. of layers, 1	description 1 in x 1 in on copper foil, avg. no. of layers, 1
description Yield >75%, Monolayer CVD grown Graphene based field effect transistors (FET) S10, Resistivity of substrate: 1-10 Ω·cm, Gate Oxide material: SiO₂, Metallization: Chromium 2 nm/Gold 50 nm	description Monolayer CVD grown Graphene based 2-probe field effect transistors (FET)., Chip dimensions: 10 mm x 10 mm, Resistivity of substrate: 1-10 Ω·cm Metallization: Chromium/Gold-Palladium 2/50 nm, Number of devices per chip: 12, Chip thickness: 675 μm, Dirac point: < 50 V Yield >75%, Encapsulation: 50 nm Al₂O₃ + 100 nm Si₃N₄, Absolute Maximum Ratings Maximum gate-source voltage: ± 50 V Maximum temperature rating: 150 °C Maximum drain-source current density: 10⁷ A/cm², Gate oxide materials: 90 nm SiO₂, Graphene field-effect mobility: >1000 cm²/V·s	description -	description FET Electron Mobility on Al₂O₃: 2;000 cm₂/V·s, Number of graphene layers: 1, FET Electron Mobility on SiO₂/Si (expected): 4; 000 cm²/V·s, Grain size: Up to 10 μm, Coverage: >95%, Transparency: >97%

Still not finding the right product?

Explore all of our products under Graphene FET chip

Classe de stockage

11 - Combustible Solids

Que se passe-t-il ?

nwg

Point d'éclair (°F)

Not applicable

Point d'éclair (°C)

Not applicable

Faites votre choix parmi les versions les plus récentes :

Certificats d'analyse (COA)

Lot/Batch Number

It looks like we've run into a problem, but you can still download Certificates of Analysis from our Documents section.

Si vous avez besoin d'assistance, veuillez contacter Service Clients

Déjà en possession de ce produit ?

Retrouvez la documentation relative aux produits que vous avez récemment achetés dans la Bibliothèque de documents.