244651
Tin(IV) oxide
−325 mesh, 99.9% trace metals basis
Synonym(s):
Stannic oxide
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About This Item
Linear Formula:
SnO2
CAS Number:
Molecular Weight:
150.71
EC Number:
MDL number:
UNSPSC Code:
12352303
PubChem Substance ID:
NACRES:
NA.23
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Assay
99.9% trace metals basis
form
powder
particle size
−325 mesh
density
6.95 g/mL at 25 °C (lit.)
application(s)
battery manufacturing
SMILES string
O=[Sn]=O
InChI
1S/2O.Sn
InChI key
XOLBLPGZBRYERU-UHFFFAOYSA-N
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General description
Tin(IV) oxide (SnO2) is an n-type wide band gap semiconductor with high transmittance at nearIR and visible region. It is scratch resistant and chemically inert.
Application
Tin(IV) oxide has been used to prepare thin films of TiO2-doped SnO2 oxide nanocomposites.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
It can be used as astarting material to prepare niobium and zinc-doped titanium-tin-oxidesolid-solution ceramics, which are applicable in the field of electronicdevices.
Storage Class Code
11 - Combustible Solids
WGK
nwg
Flash Point(F)
Not applicable
Flash Point(C)
Not applicable
Personal Protective Equipment
dust mask type N95 (US), Eyeshields, Gloves
Certificates of Analysis (COA)
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Guangmin Zhou et al.
Nanoscale, 5(4), 1576-1582 (2013-01-19)
We explore a hybrid material consisting of SnO(2) nanoparticles (NPs) embedded in the porous shells of carbon cages (SnO(2)-PSCC). The hybrid material exhibits improved kinetics of lithiation-delithiation and high reversible capacity, and excellent cyclic stability without capacity loss over 100
Linlin Li et al.
Nanoscale, 5(1), 134-138 (2012-11-14)
Novel eggroll-like CaSnO(3) nanotubes have been prepared by a single spinneret electrospinning method followed by calcination in air for the first time. The electrospun sample as a lithium-ion battery electrode material exhibited improved cycling stability and rate capability by virtue
Jaewon Jang et al.
Advanced materials (Deerfield Beach, Fla.), 25(7), 1042-1047 (2012-11-20)
This work employs novel SnO(2) gel-like precursors in conjunction with sol-gel deposited ZrO(2) gate dielectrics to realize high-performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm(2) V(-1) s(-1) in saturation at operation voltages
Hui Song et al.
Nanoscale, 5(3), 1188-1194 (2013-01-10)
One-dimensional (1-D) SnO(2) nanorods (NRs) with a rutile structure are grown on various substrates regardless of the lattice-mismatch by using a new nutrient solution based on tin oxalate, which generated supersaturated Sn(2+) sources. These affluent sources are appropriate for producing
Qing Zhou et al.
Biosensors & bioelectronics, 49, 25-31 (2013-05-28)
A sensitive amperometric acetylcholinesterase (AChE) biosensor, based on SnO2 nanoparticles (SnO2 NPs), carboxylic graphene (CGR) and nafion (NF) modified glassy carbon electrode (GCE) for the detection of methyl parathion and carbofuran has been developed. The nanocomposites of SnO2 NPs and
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