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Sigma-Aldrich

Molybdenum(VI) oxide

nanopowder, 100 nm (TEM), 99.5% trace metals basis

Synonym(s):

Molybdenum trioxide

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About This Item

Linear Formula:
MoO3
CAS Number:
Molecular Weight:
143.94
EC Number:
MDL number:
UNSPSC Code:
12352302
PubChem Substance ID:
NACRES:
NA.23

Assay

99.5% trace metals basis

form

nanopowder

particle size

100 nm (TEM)

mp

795 °C (lit.)

SMILES string

O=[Mo](=O)=O

InChI

1S/Mo.3O

InChI key

JKQOBWVOAYFWKG-UHFFFAOYSA-N

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Application

Molybdenum oxide nanoparticles have been studied in photocatalytic systems, as gas sensors for automobiles and as anodes in lithium ion batteries.
Precursor to LAMOX fast ion conductors and superconductors.
Used in the solid state synthesis of a remarkable ternary, reduced molybdenum oxide, Pr4Mo9O18, whose structure contains previously unknown Mo7, Mo13 and Mo19 clusters. The new cluster product is a small band gap semiconductor.

Pictograms

Health hazardExclamation mark

Signal Word

Warning

Hazard Statements

Hazard Classifications

Carc. 2 - Eye Irrit. 2 - STOT SE 3

Target Organs

Respiratory system

Storage Class Code

11 - Combustible Solids

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable


Certificates of Analysis (COA)

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Prasad, A. K.; et al.
J. Mater. Sci., 38, 4347-4352 (2003)
Lee, S.H.; et al.
Advanced Materials, 20, 3627-3632 (2008)
Song, K.Y.; et al.
Chemistry of Materials, 13, 2349-2355 (2001)
Di-Yan Wang et al.
Advanced materials (Deerfield Beach, Fla.), 24(25), 3415-3420 (2012-06-08)
A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS(2) nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS(2) nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a
Seiichiro Murase et al.
Advanced materials (Deerfield Beach, Fla.), 24(18), 2459-2462 (2012-04-11)
An MoO(3) film spin-coated from a solution prepared by an extremely facile and cost-effective synthetic method is introduced as an anode buffer layer of bulk-heterojunction polymer photovoltaic devices. The device efficiency using the MoO(3) anode buffer layer is comparable to

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