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214906

Sigma-Aldrich

Hypophosphorous acid solution

50 wt. % in H2O

Synonym(s):

Phosphinic acid

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About This Item

Linear Formula:
H3PO2
CAS Number:
Molecular Weight:
66.00
MDL number:
UNSPSC Code:
12352106
PubChem Substance ID:
NACRES:
NA.21

vapor pressure

<17 mmHg ( 20 °C)

Quality Level

form

liquid

concentration

48-52% in NaOH (titration)
50 wt. % in H2O

pH

1 (20 °C, 500 g/L)

density

1.206 g/mL at 25 °C

SMILES string

O[PH2]=O

InChI

1S/H3O2P/c1-3-2/h3H2,(H,1,2)

InChI key

ACVYVLVWPXVTIT-UHFFFAOYSA-N

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General description

H3PO2, a monobasic oxyacid, is also referred to as phosphinic acid. H3PO2 participates as a reducing agent for the conversion of aromatic and aliphatic diselenides to the corresponding selenols.
It undergoes oxidation in the presence of Ce(IV) and a strong acid to afford cerium(IV) hypophosphite complex ions.

Application


  • Synthesis of Aminobisphosphinates through a Cascade Reaction between Hypophosphorous Acid and Bis(trimethylsilyl)imidates Mediated by ZnI(2).: This research presents a novel method for synthesizing aminobisphosphinates, utilizing hypophosphorous acid in a zinc iodide-mediated cascade reaction, which could be relevant in the development of new chemical entities in medicinal chemistry (Ayadi et al., 2023).

  • Facile Synthesis of Liquid Crystal Dimers Bridged with a Phosphonic Group.: This study explores the use of hypophosphorous acid in the synthesis of phosphonic group-bridged liquid crystal dimers, offering potential advancements in materials science and display technologies (Wang et al., 2022).

  • Oxidation of Hypophosphorous Acid by a Ruthenium(VI) Nitrido Complex in Aqueous Acidic Solution. Evidence for a Proton-Coupled N-Atom Transfer Mechanism.: Investigates the mechanistic details of hypophosphorous acid oxidation by a ruthenium complex, shedding light on reaction pathways important in catalysis and synthesis (Li et al., 2022).

  • Solution-processed Ge(ii)-based chalcogenide thin films with tunable bandgaps for photovoltaics.: Discusses the application of hypophosphorous acid in the development of germanium-based chalcogenide thin films, contributing to advancements in photovoltaic materials (Hu et al., 2022).

  • One-Pot Synthesis and in Silico Molecular Docking Studies of Arylselanyl Hydrazides as Potential Antituberculosis Agents.: Utilizes hypophosphorous acid in the one-pot synthesis of arylselanyl hydrazides, evaluated for their potential as antituberculosis agents through molecular docking studies (Borges et al., 2022).

Pictograms

Corrosion

Signal Word

Danger

Hazard Statements

Hazard Classifications

Eye Dam. 1 - Met. Corr. 1 - Skin Corr. 1B

Storage Class Code

8B - Non-combustible corrosive hazardous materials

WGK

WGK 1

Flash Point(F)

Not applicable

Flash Point(C)

Not applicable


Certificates of Analysis (COA)

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Enzheng Shi et al.
ACS nano, 13(2), 1635-1644 (2019-03-01)
Edges of two-dimensional (2D) halide perovskites are found to exhibit unusual properties such as enhanced photoluminescence lifetime and reduced photoluminescence emission energy. Here, we report the formation mechanism and the dynamic nature of edge states on exfoliated 2D halide perovskite
Hongyan Liang et al.
Advanced science (Weinheim, Baden-Wurttemberg, Germany), 7(8), 1903213-1903213 (2020-04-25)
Perovskite-based light-emitting diodes (PeLEDs) are now approaching the upper limits of external quantum efficiency (EQE); however, their application is currently limited by reliance on lead and by inadequate color purity. The Rec. 2020 requires Commission Internationale de l'Eclairage coordinates of
Hypophosphorous acid mediated dehalogenation in water.
Jang DO.
Tetrahedron Letters, 37(30), 5367-5368 (1996)
The Kinetics and Mechanism of the Oxidation of Hypophosphorous Acid by Cerium (IV) in Perchloric Acid Solution.
Carroll RL and Thomas LB.
Journal of the American Chemical Society, 88(7), 1376-1381 (1996)
Shibin Deng et al.
Nature communications, 11(1), 664-664 (2020-02-02)
Two-dimensional hybrid organic-inorganic perovskites with strongly bound excitons and tunable structures are desirable for optoelectronic applications. Exciton transport and annihilation are two key processes in determining device efficiencies; however, a thorough understanding of these processes is hindered by that annihilation

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